Annealing of High Dose Implanted GaAs with Halogen Lamps

Abstract

ABSTRACTHalogen lamps are used to anneal implanted GaAs. Surface protection is obtained by mouting the substrate in a sandwiched configuration between a silicon and a quartz plate. Raman scattering measurements are carried out to follow simultaneously lattice reconstruction and surface degradation due to Arsenic loss. The evolution of the Raman spectra is compared to a T.E.M. analysis carried out on the same samples.</jats:p