A Model of Surface Misorientation Occurring During MBE of GaAs:Be

Abstract

ABSTRACTAn impurity adsorption model is proposed accounting for a distortion of the surface morphology of GaAs:Be epitaxial layers and an emergence of misoriented facets. According to the model, the morphology distortion occurs as the surface sublimation energy of the growing face drops down to zero because of adsorption of Be atoms at the layer surface. The model is in good agreement with available experimental data on the surface morphology distortion of GaAs:Be layers grown by MBE.</jats:p