ORIENTATION OF CRYSTAL THIN LAYER WITH DIAMOND STRUCTURE USING RAMAN SCATTERED LIGHT.

Abstract

A method for determining the orientation of an arbitrarily oriented crystal thin layer using Raman scattered light has been proposed. The intensity of Raman scattered light from the diamond structure thin layer as a function of both the normal of the thin layer and the polarization direction of incident light is derived, and the orientation of the thin layer is then determined by means of four extrema of this function. The orientation results of this method for silicon wafers are compared with that determined by the X-ray method.link_to_subscribed_fulltex