Electroluminescense and photoluminescense of nano-crystalline Si:H films

Abstract

The luminescense properties of nc-Si:H films grown by PECVD method through controlling deposition conditions have been studied. DC voltage was longtitudinally applied on the films, and the electronluminescense of the materials can be clearly found in dark surroundings. The spectra of EL and PL of nc-Si:H films were measured in the same instrument. Using Lambda 9 UV/VIS/NIR spectrophotomer, we have measured the transmission spectra of nc-Si:H films, and obtained the Tauc curves and the optical gap Eg.link_to_subscribed_fulltex