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research
A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current
Authors
CH Ang
TP Chen
+3 more
S Fung
J Huang
S Manju
Publication date
1 January 2004
Publisher
'AIP Publishing'
Doi
Cite
Abstract
In this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study. © 2004 American Institute of Physics.published_or_final_versio
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Last time updated on 21/04/2021
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Last time updated on 01/06/2016