Analytical Two-Layer Hall Analysis - Application To Modulation-Doped Field-Effect Transistors

Abstract

The classical magnetic‐field‐dependent Hall coefficient and conductivity equations are inverted to give the mobilities μ1 and μ2 and carrier concentrations n1 (or p1) and n2 (or p2) in two degenerate bands. The two‐band solution holds for arbitrary magnetic‐field strength as long as quantum effects can be ignored (i.e., kT≳ℏeB/m∗), and it is argued that the analysis can also be applied to two separate layers up to reasonable field strengths. The results are used to determine the two‐dimensional electron gas mobility and carrier concentration in a modulation‐doped field‐effect transistor with a highly doped cap layer