3 pages, 2 figures.We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100)
films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of
high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us
to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic,
and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin
arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties
of MnAs films around RTWe thank the BESSY staff for support. This work has
been supported by the Spanish Ministry of Education and
Science (“Ramón y Cajal” and “Materials” Programs, 2005
call and MAT2004-05348 Grant, respectively) and by the
German Federal Ministry for Education and Research.Peer reviewe