В работе приведены результаты ионообменного извлечения нитратов из воды. Определена эффективность высоко- и низкоосновных анионитов при извлечении из воды нитратов. Определены условия регенерации анионитов с получением продуктов, пригодных для употребления.This paper presents the results of ion exchange extraction of nitrates from water. The efficiency of strong and weak basic anion exchange resins for nitrate removal was determined. The condition for regeneration of anion exchange resins to produce products suitable for consumption was determine

Березуцкий, Вячеслав Владимирович

Березуцкая, Н. Л.

The compensation mechanism of silicon (Si) donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the Si donors are consecutively deactivated by Si acceptors, Si clusters, and Si donor-gallium vacancy complexes . A microscopic model based an the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. The annealing of highly Si-doped GaAs under As atmosphere reduces the concentration of Si atoms incorporated into Si pairs and clusters by cluster dissolution, while the concentration of Si donorsGa vacancy complexes, and Si donor-As vacancy complexes increase. For the dissolution of the Si clusters during heat treatment, a Ga vacancy-mediated mechanism is found. By combining positron lifetime spectroscopy with scanning tunneling microscopy, we observed with increasing Si-doping concentration an increasing concentration of a deep positron trap identified as Si donorgallium vacancy complex. The concentration of shallow positron traps increased with the Si concentration too. The shallow traps are found to be Si acceptors and Si cluster

Domke, C.

Juelich Shared Electronic Resources

Untersuchung der Kristallgitterdefekte und der Kompensationsmechanismen in hoch siliziumdotiertem GaAs mit Hilfe der Rastertunnelmikroskopie

Domke, Christiane

RWTH Publications

Publikationsserver der RWTH Aachen University

eNTUKhPIIR Electronic National Technical University "Kharkiv Polytechnic Institute"; Institutional Repository