Contains report on one research project.Joint Services Electronics Program (Contract DAAL03-86-K-0002)Joint Services Electronics Program (Contract DAALO3-89-C-0001

Azzam, Walid

Bahl, Sandeep R.

Bennett, Brian B.

del Alamo, Jesus A.

Greenberg, David

Makhdumi, Shazia

Rammo, Ferase

DSpace@MIT

Chapter 7. High-Frequency Semiconductor Field-Effect TransistorsChapter 7. High-Frequency InAIAs/InGaAsMetal-Insulator-Doped Semiconductor Field-EffectTransistors (MIDFET's) for TelecommunicationsSponsorJoint Services Electronics Program (Contracts DAAL03-86-K-0002 and DAAL03-89-C-0001)Academic and Research StaffProfessor Jesus A. del AlamoGraduate StudentsSandeep Bahl, Brian Bennett, David GreenbergUndergraduate StudentsWalid Azzam, Shazia Makhdumi, Ferase RammoThe goals of this new project at RLE are todesign, fabricate, test, and model submicronInAIAs/InGaAs Heterostructure Field-EffectTransistors (HFET's) on InP. In particular,we are pursuing device structures in whichthe InAIAs gate material is undoped but theInGaAs channel is thin and heavily doped.We call this new device a MIDFET, forMetal-insulator Doped-channel Field-EffectTransistor.There are many advantages of this deviceover MODFET's that stem from the lack ofdopant impurities in the InAIAs gateinsulator:1. Absence of DX centers and their delete-rious effects: persistent photoconduc-tivity, low-temperature current collapse,etc.2. Absence of transconductance and cur-rent-gain cut-off frequency collapse atlarge gate bias.3. Improved breakdown voltage.Due to these merits over MODFET's,MIDFET's may arise as the device of choicefor a number of applications: microwavepower amplifiers, optoelectronic integratedcircuits on InP, and ultra high-speed logic.Work to date has concentrated on the growthof high-quality InAlAs and InGaAs epitaxiallayers on InP by molecular-beam epitaxy.We have consistently achieved lattice-matching conditions (mismatch smaller than0.1 percent) over extended periods of timefor both ternaries. We have carried out Sidoping-calibration growths of InGaAs in the1017 -1019 cm - 3 doping range. We have alsogrown a number of exploratory device struc-tures that will be processed very soon.In order to obtain fast turn-around cali-bration of doping of InGaAs we have refittedan existing vacuum chamber into an ohmiccontact alloying oven. This permits the fabri-cation of Sn/In ohmic contacts on van derPauw test samples of InGaAs in a very shorttime. We have also built a special sampleholder for the van der Pauw samples thatdoes not require bonding. Simple pressurecontacts hold the sample in place andprovide electrical contacts. This holder hasconsiderably reduced sample mounting time.Finally, we have designed and fabricated afive-level device mask set that incorporates alarge number of test devices. We haveseveral field-effect transistors with gatelengths between 1 and 50 microns with threedifferent gate orientations with respect to theflat of the wafer: 0, 45, and 90 degrees. Wehave incorporated microwave transistors withgate lengths between 1 and 5 microns in twoorientations: 0 and 90 degrees. ATransmission-Line Model (TLM) structure isChapter 7. High-Frequency Semiconductor Field-Effect TransistorsGate metal2DEGMODFETintended for measurement of parasitic resist-ances. Simple Hall and gated-Hall test pat-terns will measure the carrier and mobilityprofiles in the channel. We also have side-gating test devices, gate-leakage current testpatterns, and several structures for measuringthe sheet resistance of the various layersinvolved.Publications and Conference PapersPresenteddel Alamo, J., Eight invited contributions toProperties of Silicon, EMIS DatareviewsSeries No. 4. INSPEC, the Institute ofElectrical Engineers, London: 1988.The titles of the datareviews are:* 5.4 Electron mobility inepitaxial Si, 142-143.n-type* 5.7 Minority carrier electron mobilityin p-type Si, 145-146.MIDFET* 5.8 Minority carrier electronlength in p-type Si, 147.diffusion* 5.9 Minority carrier electron lifetime inp-type Si, 148-149.* 6.3 Hole mobility in p-type epitaxialSi, 160-161.* 6.4 Minority carrier hole mobility inn-type Si, 162-163.* 6.5 Minority carrier hole diffusionlength in n-type Si, 164-165.* 6.6 Minority carrier hole lifetime inn-type Si, 166-167.del Alamo, J., and T. Mizutani, "AModulation-Doped Channel InAIAs/-InGaAs MIDFET (Metal-Insulator-DopedSemiconductor FET)," Presented at 1988Workshop on Compound SemiconductorMaterials and Devices (WOCSEMMAD),Monterey, California, February 22-24,1988.48 RLE Progress Report Number 131Chapter 7. High-Frequency Semiconductor Field-Effect Transistorsdel Alamo, J., and T. Mizutani, "A Recessed-Gate InAIAs/n+ -InGaAs MISFET," Pre-sented at the 35th Spring Meeting of theJapan Society of Applied Physics, Tokyo,Japan, March 28-31, 1988. Abstractpublished in Extended Abstracts of theJapan Society of Applied Physics 1003(1988).del Alamo, J., "High-Performance InAIAs/-InGaAs MIS-type FET's Fabricated byMBE," Presented at the 3rd New EnglandMBE Workshop, Cambridge, Massachu-setts, April 19, 1988.del Alamo, J., and T. Mizutani, "AnInAIAs/n+ -InGaAs MISFET with aModulation-Doped Channel," Presentedat 46th Annual Device Research Confer-ence, Boulder, Colorado, June 20-22,1988. Abstract published in IEEE Trans.Electron. Devices 35(12):2441 (1988).del Alamo, J., and T. Mizutani, "AnInAIAs/n+ -InGaAs MISFET with aModulation-Doped Channel," Presentedat 49th Fall Meeting of the Japan Societyof Applied Physics, Fukui, Japan, October4-7, 1988. Abstract published inExtended Abstracts of the Japan Societyof Applied Physics 940 (1988).del Alamo, J., and T. Mizutani, "A Recessed-Gate InAIAs/n+ -InGaAs MISFET," Pre-sented at the Symposium on Advances inMaterials, Processing and Devices in Ill-VCompound Semiconductors of the Fall1988 Materials Research Society Meeting,Boston, Massachusetts, November 28-30,1988. To be published in SymposiumProceedings (1989).del Alamo, J., and T. Mizutani, "AuGeNiOhmic Contacts to InP for FET Applica-tions," Solid-State Electron. 31(11):1635-1639 (1988).del Alamo, J., and T. Mizutani,"Bias Depend-ence of fT and fmax in an InAIAs/n+-InGaAs MISFET," IEEE Electron DeviceLett. EDL-9 (12):654-656 (1988).Tomizawa, M., T. Mizutani, and J. del Alamo,"2D Analysis for Modulation-DopedChannel MISFET," Presented at 49th FallMeeting of the Japan Society of AppliedPhysics, Fukui, Japan, October 4-7, 1988.Abstract published in Extended Abstractsof the Japan Society of Applied Physics940 (1988).Wagner, J., and J. del Alamo, "Band GapNarrowing in Heavily Doped Silicon: AComparison of Optical and ElectricalData," J. Appl. Phys. 63 (2):425-429(1988).Professor John M. Graybeal50 RLE Progress Report Number 131

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

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