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~(40)Ar~(10+)激发半导体功能材料P-Si表面的激发光谱
Authors
张小安,王翔
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Abstract
报道了用ECR离子源的高电荷态离子~(40)Ar~(10+)入射到p型Si表面的实验研究,通过实验测量到的Si原子和Si~(2+)离子的200nm-1000nm光谱,研究了谱线产生的机理。实验结果表明:低速高电荷态离子与固体表面相互作用中,可有效地激发原子和离子的特征谱线,分析了这一现象和相互作用过程的发光机理
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Last time updated on 24/05/2016