A detailed account of the electrochemistry involved in the deposition of Sn, Se and SnSe ®lms is presented. The redox reactions and the
polarization curves of Sn and Se were studied to ®x the pH and potential values V (NHE) to get uniform deposition. Films were cathodically
deposited at 558C. XRD studies show an orthorhombic structure. Films showed an indirect band-gap of 1.05 eV. Surface morphological
studies were carried out using SEM, and the stoichiometry was estimated from XPS analysis. Effect of annealing in air at 2008C has been
reported