Photoluminescence and electrical conductivity of silicon containing multilayer structures of diamond like carbon were studied. These multilayer structures were deposited in a sequence a-Si:H/ Si-(a-C:H)/ a-C:H using conventional RF-PECVD technique. It was found that with the variation of silane partial pressure during the growth of middle layer (Si-(a-C:H)), the optical, electrical and photoluminescence properties of these multilayer structure varied. Electrical conductivity showed negative thermally activated process in these multilayer structure which disappeared after annealing the samples at 250 degrees C. The role of a-C:H as protective layer for luminescent Si-(a-C:H) layer has also been emphasized
