Fabrication of SOI nano devices

Abstract

Some current fabrication technologies of SOI nano devices are reviewed in this paper. By means of arsenic-assisted etching and oxidation effects, we have fabricated several SOI nano devices: single-electron transistor, nano floating gate memory device and cell, Ω-gate elevated source/drain MOSFET. The application of this technique for fabricating a Schottky barrier MOSFET is also presented