OCTO Layout Variations as an Alternative to Mitigate TID Effects

Abstract

This paper performs an experimental comparative study between the OCTO SOI MOSFET (octagonal gate geometry) and its derivations (different angles) as a total ionizing dose (TID) effects mitigation strategy. After a TID equal a 600 krad were analyzed the leakage current (ILEAK) behaviour in order to indicate the better configuration for digital applications in radioactive environment. The α angle equal to 53.1° achieved promising resultsfor low power and low voltage applications due ILEAK reduction in function of the TID