The effects of doping on the electrical behavior of grain boundary in large grain polysilicon-on-insulator (LPSOI) film formed by metal-induced lateral crystallization (MILC) with nickel is studied. It is found that N-channel MOSFETs formed on LPSOI film exhibits larger leakage current and more susceptible to punchthrough compared with P-channel MOSFETs. Strong correlation between leakage current of the devices and the electrical property of a single longitudinal grain boundary is observed. Through careful process calibration and experimental characterization, the effects of dopant on nickel atom diffusion and final transistor characteristics are reported
