Single-crystalline silicon thin-film transistor on glass

Abstract

Single-crystalline silicon-on-glass (cSOG) has been obtained using an "ion-cutting" based layer-transfer technique. Compared to previous attempts of realizing cSOG, extended silicon etching is not required and bulk silicon, instead of the relatively more expensive silicon-on-insulator donor wafers, can be used. Thin-film transistors based on cSOG have been fabricated and characterized. The stability of cSOG Thin-film transistors with or without laser-induced annealing is reported. ©2004 IEEE