Variation of structural, electrical, and optical properties of Zn <inf>1-x</inf>Mg <inf>x</inf>O thin films

Abstract

Zn 1-xMg xO thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As the substrate temperature increased, the Mg content in the Zn 1-xMg xO thin films increased and the photoluminescence (PL) peak position of the Zn 1-xMg xO thin films shifted from 370 to 356 nm, indicating a band gap expansion. Variations of the structural, electrical, and optical properties of Zn 1-xMgO thin films have been observed and analyzed by x-ray diffraction, Hall measurements, and PL measurements. © 2006 American Institute of Physics