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Plasma enhanced chemical vapor deposition of SiO_2 using novel alkoxysilane precursors

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Publication date
1 March 1995
Publisher
'American Vacuum Society'

Abstract

This communication describes our results using these novel alkoxysilane precursors for PECVD of SiO_2 films in an inductively coupled rf plasma reactor. The effects of deposition time, rf power, and organosilane pressure on the films’ characteristics are described

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