We studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behaviors of lattice strain, Raman line shift, and linewidth. The lattice spacing for the planes parallel to the surface decreases as a result of irradiation, and amounts to a strain of −0.061% for (100) face, −0.056% for (110) face, and −0.050% for (111) face for 15 MeV Cl bombarded samples to a dose of 1.25E15 ions/cm^2. The negative lattice strain, Raman line shift, and line width completely recover at 450°C, and show a major recovery stage at 250°C – 350°C

Burns, G.

Dacol, F. H.

Jones, T.

Tombrello, T. A.

Vreeland, T., Jr.

Wie, C. R.

Xiong, F.

Zhu, Z.

Caltech Authors - Main

RADIATION DEFECT-INDUCED LATTICE CONTRACTION OF InP 
C.R. WIE~ T. JONEs,**T.A. TOMBRELLo!*T. VREELAND, JR!*F. XIONG!*z. ZHU!* 
G. BURNS*** AND F.H. DACOL*** 
* State University of New York at Buffalo, Dept. of Electrical and 
Computer Engineering, Amherst, N.Y. 14260 
**California Institute of Technology, Div. of Physics, Mathematics and 
Astronomy, and Engineering and Applied Sciences, Pasadena, CA 91125 
***IBM Thomas Watson Research Center, Yorktown Heights, New York 10598 
ABSTRACT ----
517 
We studied the lattice strain induced in the MeV ion bombarded InP 
crystals and the annealing behaviors of lattice strain, Raman line shift, 
and linewidth. The lattice spacing for the planes parallel to the surface 
decreases as a result of irradiation, and amounts to a strain of -0.061% 
for (100) face, -0.056% for (110) face, and -0.050% for (111) face for 15 
MeV Cl bombarded samples to a dose of 1 .25El5 ions/cm2 • The negative 
lattice strain, Raman line shift, and line width completely recover at 450°C, 
and show a major recovery stage at 250°C - 350°C. 
INTRODUCTION -------
InP is an important III-V compound for optoelectronic, photovoltaic, 
high-speed logic, and microwave devices. InP and alloys on InP substrates 
can be used to fabricate integrated electronic and electro-optic devices on 
the same chip for high-speed computer and communications applications. In 
spite of its potential, development of InP technology, and the materials 
study of InP has been less emphasized than GaAs [1]. It is partly due to 
their similar bandgaps, and that fabrication technology is easier for GaAs 
than for InP. 
Reported studies of the radiation-induced defects in InP include 
identification of P1n antisites [2], defect states [3-7], formation and 
annealing of defects [8] in electron-irradiated samples, deep and shallow 
levels [9] and photoconductivity [10] in light-ion bombarded InP, and 
annealing of electron traps in Y-ray irradiated samples [11]. In MeV 
electron-irradiation studies, Levinson et al. found many electron traps 
with anomalously low introduction rates (10- 4- lo-3cm-1) compared with GaAs 
(~l cm- 1) and GaP (~O.l cm-1) [4]. Koyama et al. measured the introduction 
rate of a dominant electron trap in ~-ray irradiated samples (~0.05 cm- 1), 
and they attributed the lower introduction rate in the electron-irradiated 
samples to a simultaneous annealing during the irradiation by beam-heating 
[11]. 
MeV ion implantation in III-V compounds is interesting because of its 
potential applications in device processing for such devices as buried 
channel CCDs, mixer diodes, vertical FETs and photodiodes [12]. Other 
applications include buried isolation layers, buried interconnects, and 
modifications of optical properties for III-V laser devices. MeV ion 
implantation also can be used to replace costly and time-consuming 
epitaxial processing [13]. In view of the above, we studied the effects on 
structural properties [14-16], and the phonon energy shifts [20,21] in 
GaAs bulk and epitaxial samples resulting from MeV ion implantation. 
In this paper, we present the experimental data for MeV ion implanted 
InP crystals. Lattice strain was measured usin9 the x-ray rocking curve 
technique for MeV implanted InP (100), InP (110), and InP (111). 
**Supported in part by the Nationa~ Science Foundation [DMR 84-2119] 
Mat. Res. Soc. Symp. Proc. Vol. 74. ·C 1987 Materials Research Society 
518 
(A dynamical theory analysis of the x-ray rocking curves for MeV ion bom-
barded crystals is given in reference [17]). The lattice strain was 
negative for all three orientations. Thermal annealing results on the x-ray 
strain, Raman line shift, and linewidth are reported. The thermal annealing 
behavior is compared with radiation defect annealing data of MeV electron 
irradiated InP. 
Lattice Contraction of InP Due to Defects 
The n-type or p-type InP wafers were bombarded at room temperature 
with 15 MeV chlorine ions with particle current 0.04-0.14 µA/cm 2 or with 
6-8 MeV oxygen ions with particle current 4-8 µA/cm 2 • The ions stop a few 
microns below the sample surface (e.g.<v5 µm for 15 MeV Cl). After a high 
dose (~1015 cm- 2 for15 MeV Cl), the first 3-4µm layer becomes populated 
with a high concentration of point defects and point defect complexes [14,15l 
Rocking curves are shown in Figure 1 for the n-type InP samples 
bombarded to l.25E 15 cm- 2 with 15 MeV Cl ions. The small peaks at 0.0 
degree correspond to a reflection from the undamaged region of the crystal 
beyond the ion range. The larger peaks at the positive angles are due to 
the strain profile in the ion damaged layer. Shifts of the strain peak to 
positive angles indicate a decrease in the lattice spacing for planes 
parallel to the surface, that is, in the direction perpendicular to the 
surface. This is called the perpendicular strain. 
?-.'I 
1 
~.,_--Lf:u'.-.-~I12-cf.-i~}.~~3. ~-,--,-.--~ 
I (I I - -j I In:'( I 00) I 
r ·1UO refl. •. l 
~1- . I 
r- •'\ ,. ~ J 
o~:..1 .... ~:L~_l_J._1 ~~,,~>HW~·~! 
-O O'.i O.UO O.G~ 0 10 
10
1
---- ---r ------r---r---T---.--j 
I 
Inf'( I 11) 
222 refl. .. _i I : I 
:1 u ____ J_,<~_...._ ___ J 
·OO'.> 0. uo u. o~ 0. 10 
Fig. 1 The x-ray rocking 
curves taken with 
FeKal radiation. The 
InP crystals were 
bombarded with 15 Me V 
Cl ions to l.25El5/ 
cm 2 beam dose at 
room temperature. 
The perpendicular 
strain obtained from 
these data is dis-
cussed in the text. 
519 
There was no change in the lattice parameter in the direction parallel 
to the surface, as was the case for other III-V crystals [14,15,18]. It is 
most surprising that the crystal volume contracts as a result of ion bom-
bardment, unlike other III-V compounds (e.g., GaAs, GaP, and InAs) which 
expand due to ion damage. 
The perpendicular lattice parameter change resulting from the ion 
irradiation is deduced from the rocking curves in Figure 1 and amounts to 
a strain of -0.061% for (100), -0.056% for (110) and -0.050% for (111). We 
believe that the uniform strain depth-profile (as is seen from the symmetric 
shape of the strain peak) is due to a defect concentration which is nearly 
constant in the first few micron layer [14,15]. The parallel lattice strain 
was experimentally found to be approximately zero. Perhaps, the reason is 
that the surface layer is coherently coupled to the substrate lattice [18]. 
If the coherent lattice coupling was removed, a uniform defect concentration 
will result in an isotropic lattice strain, which can be obtained from 
elasticity theory. This isotropic lattice strain is approximately -0.03% 
for 15 MeV Cl ion bombarded InP. (All the three different orientations 
give approximately same number, as one expects). 
An InP (100) crystal implanted with 8 MeV oxygen ions to 6E 17 ions/cm2 
was found to have a perpendicular x-ray strain of -0.031%. This is lower 
than in the Cl ion-bombarded sample. We believe that it is due to the 
higher oxygen beam current which may induce greater annealing from beam 
heating. 
Isochronal Annealing 
Isochronal annealing data for an 8 MeV oxygen implanted InP (100) 
sample are shown in Figure 2(a). Each point was obtained after a 15 
minutes anneal. The complete recovery of strain is seen to occur at ~450°C. 
A major recovery is observed at 300-350°C. Figure 2(b) shows the annealing 
behavior of LO phonon energy shift and line width obtained from a 6 MeV 
oxygen implanted InP (100) to a beam dose of 5E 15cm- 2 • A complete 
recovery occurs at ~ 450°C for the Raman line shift and width, and a 
recovery stage is observed at 230 - 300°C. A 15 MeV Cl ion-bombarded InP 
(111) sample (dose= 5E 15 cm- 2 ) showed similar behavior for the LO and TO 
phonon energy shifts. 
0.05[ ~ 
~ c. 01 f- (11) -1 
~ 0.031=-· ~ 
.~ L ~ 
'-1 C.02~ 1 r j BMcV G, 6E l 7 cm-21 j 
Q • 0 l r I l reP ~ !00_)...._____._ _ _._· ---'--'---- ! T ~ 
0.00 ~_,___, ~_l._J 
Fig. 2(a) 
0 l 00 200 300 100 500 
Temperature (°C) 
The isochronal anneal data of the negative strain 
in the MeV ion bombarded InP(lOO) crystal. 
520 
Discussion 
348 14 
lnP (100) (b) 
12 
~ 347 
I 
I E 
u 10 E 
t;:: ~ 
I :C 346 f--
(/) 8 0 
>- ~ 
Cl w O:'. 
w z 
z =:; 
w 345 + 
344 '---'----'------'---'--'---'---'-----'----" 
0 1 00 200 300 400 
ANNEALING TEMP. (C) 
Fig. 2(b) The anneal behaviors of the LO phonon shift and 
linewidth of the MeV bombarded InP(lOO). The 
ion was 6 MeV oxygen with beam dose 5E 15 cm- 2 • 
The lattice parameter of InP was reported to decrease with Zn or S 
doping and increase with Sn doping [19]. This observation was also core-
lated with the decrease of dislocation density in InP by Zn or S doping. 
The lattice parameters of other MeV ion bombarded III-V compounds 
(GaAs, GaP, and InAs) were all observed to increase [14,15]. Thus, the 
lattice parameter decrease of InP resulting from radiation damage is most 
unexpected. For the impurity doping-induced lattice parameter change in 
InP, Sugii suggested that the electronegativity difference between host and 
substituted atoms is more important than the difference in covalent radii. 
In the MeV ion-bombarded InP, the Coulomb interaction of various charge 
states of the defect may play important role in the lattice contraction. 
The annealing data imply several interesting points regarding the 
nature of MeV ion induced defects in InP. First, the defects responsible 
for the negative strain are completely recovered by an annealing at 450 -
500°C. This is similar to the case of GaAs where a complete recovery of 
strain and Raman line shifts occurs at~ 500°C [15,20]. For III-V compounds, 
there is a corelation between the Debye temperature and the annealing 
temperature of native defects [22]. Since Debye temperatures of InP and 
GaAs are very similar [23], the complete-recovery temperature for strain 
is consitant with Lang's argument [22]. The annealing temperature of Se-
implanted amorphous InP (750°C) [24] is also close to the annealing tempera-
ture of strain in the heavily damaged region of GaAs (~100°c) around the 
end of ion range [15]. However, in GaAs the defect annealing begins at the 
temperatures higher than 200 K [25], while in InP major annealing takes 
place during the irradiation at 77K [8]. It has been suggested that the 
ionization-assisted defect diffusion and the beam heating effect can cause 
an intensive annealing in InP during irradiation [8,11]. The simultaneous 
annealing during irradiation is also observed in a higher current, 6-8 MeV 
oxygen bombarded InP sample, where the magnitude of saturated strain is 
about a factor of two lower than in the Cl bombarded InP. 
It is interesting to compare the major recovery stage of strain and 
Raman lines at 250-350°C to the annealing results of radiation defects in 
MeV electron irradiated InP [8]. In the electron irradiated n-InP, the 
521 
conductivity was completely recovered by annealing at 320°C for 1-4 MeV, 
at 540°C for 12-14 MeV, and at 700°C for 50 MeV electron bombardments [8]. 
The last anneal stage (470-540°C) in the 14 MeV bombarded sample, which was 
absent from 1-4 MeV samples, was attributed to more complicated defects 
created by higher energy electrons. The anneal stage III of the conducti-
vity recovery was at higher temperature for higher electron energy, i.e., 
230-320°C for 1-4 MeV, 270-400°C for 12-14 MeV and 290-470°C for 50 MeV 
electron bombardments [8]. Our 250-350°C recovery stage is close to the 
stage III in the MeV electron bombarded sample. Moreover, the complete 
recovery of x-ray strain and Raman lines suggests that the defects respon-
sible for the negative strain in the MeV ion bombarded InP crystals may be 
similar to those created by 12-14 MeV electron irradiations. Identification 
of the specific defects which anneal at stage III in the electron bombarded 
InP might provide a clue as to why the InP lattice parameter decreases under 
MeV ion irradiation unlike other III-V compounds. 
Opposite behavior of InP and GaAs has been observed in various 
electrical properties resulting from defects: Fermi level pinning by surface 
defects [27], electrical compensation by proton bombardment [28], electrical 
activity of implanted dopants [29], and the concentration of carrier traps 
above or below half of the band gap in electron bombarded samples [4,5,26, 
30]. We also observed this behavior in the structural properties (lattice 
strain) in the MeV ion bombarded samples. 
REFERENCES ------
1. K. J. Bachman, Ann. Rev. Matr. Sci. 11 441 (1981) 
2. T.A. Kennedy and N.D. Wilsey, Appl. Phys. Lett. 44 1089 (1984) 
3. M. Levinson, H. Temkin, and W.A. Bonner, J.Elecfr-: Matr. 12 423 (1983) 
4. M. Levinson, J.L. Benton, H. Temkin, and L.C. Kimmerling,-Appl. Phys. 
Lett. 40 990 (1982) 
5. A. Sib,.,.-le and J.C. Bourgoin, Appl. Phys. Lett. 41 956 (1982) 
6. K. Ando, M. Yamaguchi, and C. Uemura, J. Appl. Pnys. 55 4444 (1984) 
7. M. Yamaguchi, K. Ando, and C. Uemura, J. Appl. Phys. 55 3160 (1984) 
8. E. Yu. Brailovskii, F.K. Karapetyan, I.G. Megela, andV.P. Tartachnik, 
Phys. Stat. Sol. (a) 71 563 (1982) 
9. A.T. Macrander, B. SchWartz, and M.W. Focht, J. Appl. Phys. 55 3595 
(1984) --
10. P.M. Downey and B. Tell, J. Appl. Phys. 56 2672 (1984) 
11. J. Koyama, J. Shirafuji, and Y. Inuishi ,Electron. Lett. 19 609 (1983) 
12. H.B. Dietsich in Advanced Applications of Ion Implantation--:- SPIE Proc. 
530 30 ( 1985) 
13. D. Payne, W.N. Grant, and W.J. Bertram, IEDM, Washington, 1980, p.248. 
14. C.R. Wie, T.A. Tombrello, and T. Vreeland, Jr., Phys. Rev. §1? 4083 
(1986) 
15. C.R. Wie, T. Vreeland, Jr., and T.A. Tombrello, Nucl. Instr. Meth. Bl6 
44 (1986) 
16. C.R. Wie, Presented at the 9th Conf. on the Appl. of Accelerators in 
Industry and Research, Denton, Texas, Nov. 1986. 
17. C.R. Wie, T.A. Tombrello, and T. Vreeland, Jr., J. Appl. Phys. 59 3743 
(1986) -
18. C.R. Wie, T. Vreeland, Jr., and T.A. Tombrello, Matr. Res. Soc. Symp. 
Proc. 35 305 (1985) 
19. K. SugTT, H. Koizumi, and E. Kubota, J. Electron. Matr. 12 701 (1983) 
20. G. Burns, F.H. Dacol, C.R. Wie, E. Burstein, and M. Cardona, Submitted 
to Mat. Res. Soc. Symp. 1986, Boston (this conference), and Bull. Am. 
Phys. Soc. 31 400 (1986) 
21. G. Burns, F~. Dacol, C.R. Wie, E. Burstein, and M. Cardona, to be 
published in Solid State Comm. 
22. D.V. Lang, R.A. Logan, and L.C. Kimmerling, Phys. Rev. ?J~ 4874 (1977) 
522 
23. U. Piesbergen in Semiconductors and Semimetals, Vol. 2, ed. by R.K. 
Willardson and A.C. Beer (Academic Press, NY 1966) p.49 
24. J.D. Woodhouse, J.P. Donnelly, P.M. Nitishin, E.B. Owens and J.L. Ryan, 
Solid State Electron. 27 677 (1984) 
25. K. Thommen, Rad. Eff. ~201 (1970) 
26. D.V. Lang, L.C. KimmerTing and S.Y. Leung, J. Appl. Phys. 47 3587 (1976) 
27. W.B. Spicer, I. Lindau, P. Skeath, C.Y. Su, and P. Chye, Phys. Rev. 
Lett. 44 420 (1980) and references therein 
28. J.P. Donnelly and F.J. Leonberger, Solid State Electron. 20 183 (1977), 
and J.P. Donnelly and C.E. Hurwitz, Solid State Electron.-ZO 727 (1977) 
29. See, for example, J.P. Donnelly, Nucl. Instr. Meth. 8182/183 Part 2, 
553 {1981) 
30. D. Pons, A. Mircea and J. Bourgoin, J. Appl. Phys.~ 4150 {1980) 


English

Radiation Defect-Induced Lattice Contraction of InP

BB-57 
RADIATION DEFECT-INDUCED LATTICE CONTRACTION OF InP* 
C. R. WIE**, T. JONES, T. A. TOMBRELLO, T. VREELAND, JR., F. XIONG, and Z. ZHOU 
Divisions of Physics, Mathematics, and Astronomy, 301-38 and 
Engineering and Applied Sciences 
California Institute of Technology 
Pasadena, California 91125 
and 
G. BURNS and F. H. DACOL 
IBM Thomas Watson Research Center 
Yorktown Heights, New York 10598 
ABSTRACT 
We studied the lattice strain induced in the MeV ion bombarded InP crystals 
and the annealing behaviors of lattice strain, Raman line shift, and linewidth. 
The lattice spacing for the planes parallel to the surface decreases as a result 
of irradiation, and amounts to - a strain of -0.061% for the (100) face, -0.0567. 
for the (110) face, and -0.050% for 2he (111) face for 15 MeV Cl bombarded 
samples to a dose of 1.25El5 ions/em • The negative lattice strain, Raman line 
shift, and line width completely recover at 450°C, and show a major recovery 
0 0 
stage at 250 C - 350 C. 
To appear in the Proceedings of the Material Research Society, Boston, MA, 
December 1986. 
*Supported in part by the National Science Foundation [DMR84-21119]. 
**Permanent address: SUNY at Buffalo, Dept. of Electrical & Computer 
Engineering, Amherst, NY 14260. 
ONE OF THE BROWN BAG PREPRINT SERIES 
IN BASIC ANV APPLIEV SCIENCE 
February 1987 
INTRODUCTION 
InP is an important III-V compound for optoelectronic, photovoltaic, high-speed logic, 
and microwave devices. InP and alloys on InP substrates can be used to fabricate inte-
grated electronic and electro-optic devices on the same chip for high-speed computer and 
communications applications. In spite of its potential, development of InP technology and 
the materials study on InP has been less emphasized than GaAs [1]. This is partly due to 
their similar bandgaps and that fabrication technology is easier for GaAs than for InP. 
Reported studies of the radiation-induced defects in InP include identification of Prn 
antisites [2], defect states [3-7], formation and annealing of defects [8] in electron-irradiated 
samples, deep and shallow levels [9] and photoconductivity [10] in light-ion bombarded 
InP, and annealing of electron traps in 1-ray irradiated samples [11]. In MeV electron-
irradiation studies, Levinson et al. found many electron traps with anomalously low in-
troduction rates (10-4 - 10-3 cm-1 ) compared with GaAs ("" 1 cm-1 ) and GaP ("' 0.1 
em - 1 ) (4]. Koyama et al. measured the introduction rate of a dominant electron trap in 
1-ray irradiated samples ("" 0.05 cm-1 ), and they attributed the lower introduction rate 
in the electron-irradiated samples to a simultaneous annealing during the irradiation by 
beam heating [11]. 
MeV implantation in III-V compounds is interesting because of its potential applica-
tions in device processing for such devices as buried channel CCDs, mixer diodes, vertical 
FETs, and photodiodes [12]. Other applications include buried isolation layers, buried 
interconnects, and modifications of optical properties for III-V laser devices. MeV ion 
implantation also can be used to replace costly and time-consuming epitaxial processing 
[13]. In view of the above, we studied the effects on structural properties [14-16], and the 
phonon energy shifts [20,21] in GaAs bulk and epitaxial samples resulting from MeV ion 
implantation. 
In this paper we present the experimental data for MeV ion implanted InP crystals. 
Lattice strain was measured using the x-ray rocking curve technique for MeV implanted 
InP (100), InP (110), and InP (111). (A dynamical theory analysis of the x-ray rocking 
curves for. MeV ion bombarded crystals is given in reference [17].) The lattice strain was 
negative for all three orientations. Thermal annealing results on the x-ray strain, Raman 
1 
line shift, and linewidth are reported. The thermal annealing behavior is compared with 
radiation defect annealing data ot MeV electron irradiated InP. 
Lattice Contraction of InP due to Defects 
Then-type or p-type InP wafers were bombarded at room temperature with 15 MeV 
chlorine ions with particle current 0.04-0.14 J.LA/cm2 or with 6-8 MeV oxygen ions with 
particle current 4-8 J.LA/cm2 • The ions stop a few microns below the sample surface (e.g., 
"' 5 J.Lm for 15 MeV Cl). After a high dose (2::: 1015cm-2 for 15 MeV Cl), the first 3-4 
J.Lm layer becomes populated with a high concentration of point defects and point defect 
complexes [14,15]. 
Rocking curves are shown in Figure 1 for then-type InP samples bombarded to 1.25E 
15 em - 2 with 15 MeV Cl ions. The small peaks at 0.0 degree correspond to a reflection 
from the undamaged region of the crystal beyond the ion range. The larger peaks at 
the positive angles are due to the strain profile in the ion damaged layer. Shifts of the 
strain peak to positive angles indicate a decrease in the lattice spacing for planes parallel 
to the surface, that is, in the direction perpendicular to the surface. This is called the 
perpendicular strain. 
There was no change in the lattice parameter in the direction parallel to the surface. 
as was the case for other III-V crystals [14,15,18]. It is most surprising that the crystal 
volume contracts as a result of ion bombardment, unlike other III-V compounds (e.g .. 
GaAs, GaP, and InAs) which expand due to ion damage. 
The perpendicular lattice parameter change resulting from the ion irradiation is de-
duced from the rocking curves in Figure 1 and amounts to a strain of -0.061% for (100). 
-0.056% for (110), and -0.050% for (111). We believe that the uniform strain depth-profile 
(as is seen from the symmetric shape of the strain peak) is due to a defect concentration 
which is nearly constant in the first few micron layer [14,15]. The parallel lattice strain was 
experimentally found to be approximately zero. Perhaps, the reason is that the surface 
layer is coherently coupled to the substrate lattice [18]. If the coherent lattice coupling 
was removed, a uniform defect concentration will result in an isotropic lattice strain is ap-
proximately -0.03% for 15 MeV Cl ion bombarded InP. (All the three different orientations 
give approximately same number, as one expects.) 
2 
An InP (100) crystal implanted with 8 MeV oxygen ions to 6E 17 ions/cm2 was found 
to have a perpendicular x-ray strain of -0.031%. This is lower than in the Cl ion-bombarded 
sample. We believe that it is due to the higher oxygen beam current which may induce 
greater annealing from beam heating. 
Isochronal Annealing 
Isochronal annealing data for an 8 MeV oxygen implanted InP (100) sample are shown 
in Figure 2(a). Each point was obtained after a 15 minute anneal. The complete recovery 
of strain is seen to occur at "'450°C. A major recovery is observed at 300- 350°C. Figure 
2(b) shows the annealing behavior of LO phonon energy shift and line width obtained from 
a 6 MeV oxygen implanted lnP ( 100) to a beam dose of 5E 15 em - 2 . A complete recovery 
occurs at "' 450°C for Raman line shift and width, and a recovery stage is observed at 
230- 300°C. A 15 MeV Cl ion-bombarded InP (111) sample (dose= 5E 15 cm-2 ) showed 
similar behavior for the LO and TO phonon energy shifts. 
Discussion 
The lattice parameter of InP was reported to decrease with Zn or S doping and increase 
with Sn doping [19]. This observation was also correlated with the decrease of dislocation 
density in InP by Zn or S doping. 
The lattice parameters of other MeV ion bombarded III-V compounds (GaAs, GaP, 
and InAs) were all observed to increase [14,15]. Thus, the lattice parameter decrease of 
InP resulting from radiation damage is most unexpected. For the impurity doping-induced 
lattice parameter change in InP, Sugii suggested that the electronegativity difference be-
tween host and substituted atoms is more important than the difference in covalent radii. 
In the MeV ion-bombarded InP, the Coulomb interaction of various charge states of the 
defect may play an important role in the lattice contraction. 
The annealing data imply several interesting points regarding the nature of MeV 
ion induced defects in InP. First, the defects responsible for the negative strain recover 
completely by annealing at 450 - 500°C. This is similar to the case of GaAs where a 
complete recovery of strain and Raman line shifts occurs at "' 500°C [15,20]. For III-
V compounds, there is a corelation between the Debye temperature and the annealing 
3 
temperature of native defects [22]. Since the Debye temperatures of InP and GaAs are 
very similar [23], the complete-recovery temperature for strain is consistent with Lang's 
argument [22]. The annealing temperature of Se-implanted amorphous InP (740°C) [24] is 
also close to the annealing temperature of strain ("' 700°C) in the heavily damaged region 
of GaAs around the end of ion range [15]. However, in GaAs the defect annealing begins 
at the temperatures higher than 200 K [25], while in InP major annealing takes place 
during the irradiation at 77 K [8]. It has been suggested that the ionization-assisted defect 
diffusion and the beam heating effect can cause an intensive annealing in InP during 
irradiation [8,11]. The simultaneous annealing during irradiation is also observed in a 
higher current, 6-8 MeV oxygen bombarded InP sample, where the magnitude of saturated 
strain is about a factor of two lower than in the Cl bombarded InP. 
It is interesting to compare the major recovery stage of strain and Raman lines at 250-
350°C to the annealing results o{radiation defects in MeV electron irradiated InP [8]. In 
the electron irradiated n-InP, the conductivty recovered completely by annealing at 320°C 
for 1-4 MeV, at 540°C for 12-14 MeV, and at 700°C for 50 MeV electron bombardments 
[8]. The last anneal· state (470- 540°C) in the 14 MeV bombarded sample, which was 
absent from 1-4 MeV samples, was attributed to more complicated defects created by 
higher energy electrons. The anneal state III of the conductivity recovery was at higher 
temperature for higher electron energy, i.e., 230- 320°C for 1-4 MeV, 270- 400°C for 
12-14 MeV and 290- 470°C for 50 MeV electron bombardments [8]. Our 250- 350°C 
recovery state is close to the stage III in the MeV electron bombarded sample. Moreover, 
the complete recovery of x-ray strain and Raman lines suggests that the defects responsible 
for the negative strain in the MeV ion bombarded InP crystals may be similar to those 
created by 12-14 MeV electron irradiations. Identification of the specific defects which 
anneal at stage III in the electron bombarded InP might provide a clue as to why the InP 
lattice parameter decreases under MeV ion irradiation- unlike other III-V compounds. 
Opposite behavior of lnP and GaAs has been observed in various electrical properties 
resulting from defects: Fermi level pinning by surface defects [27], electrical compensation 
by proton bombardment [28], electrical activity of implanted dopants [29], and the concen-
tration of carrier traps above or below half of the band gap in electron bombarded samples 
4 
[4,5,26,30]. We also observed this behavior in the structural properties (lattice strain) in 
the MeV ion bombarded samples. 
REFERENCES 
1. K. J. Bachman, Ann. Rev. Matr. Sci. 11 441 (1981) 
2. T. A. Kennedy and N. D. Wilsey, Appl. Phys. Lett. 44 1089 (1984) 
3. M. Levinson, H. Temkin, and W. A. Bonner, J. Electr. Matr. 12 423 (1983) 
4. M. Levinson, J. L. Benton, H. Temkin, and L. C. Kimmerling, Appl. Phys. Lett. 40 
990 (1982) 
5. A. Sibille and J. C. Bourgoin, Appl. Phys. Lett. 41 956 (1982) 
6. K. Ando, M. Yamaguchi, and C. Uemura, J. Appl. Phys. 55 4444 (1984) 
7. M. Yamaguchi, K. Ando, and C. Uemura, J. Appl. Phys. 55 3160 (1984) 
8. E. Yu. Brailovskii, F. K. Karapetyan, I. G. Megela, and V. P. Tartachnik, Phys. Stat. 
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5 
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FIGURE CAPTIONS 
Figure 1: The x-ray rocking curves taken with FeKal radiation. The lnP crystals were bom-
barded with 15 MeV Cl ions to 1.25 E 15/cm2 beam dose at room temperature. The 
perpendicular strain obtained from these data is discussed in the text. 
Figure 2(a): The isochronal anneal data of the negative strain in the MeV ion bombarded lnP 
(100) crystal. 
Figure 2(b): The anneal behaviors of the LO phonon shift and linewidth of the MeV bombarded 
lnP (100). The ion was 6 MeV oxygen with beam dose 5E 15 cm- 2 • 
6 
15 
• •• 10 lnP( 1 00) • • 
400 refl. • • 
• • 
5 • • 
• 
0 
-0.05 0.00 0.05 0.10 
-
3 
M 
-~ lnP(110) Q) 
:a: 2 440 refl. Cl 
c.. 
Cl) 
c 
·- 1 .-u 
Q) 
-
._ 
Q) 
~ 0 
-0.05 0.00 0.05 0. 10 0. 15 0.20 
10 
8 
lnP(111) 
• 
6 222 refL •• 
• • 
i • • 
• • 
2 • 
0 
-0.05 0.00 0.05 0.10 
Angle (degree) 
Figure 1 
7 
0.05 
-
O.Oi (a) M 
-c 0.03 • • • 
·-= • • • ... 
.. 
c.n 0.02 • 
8MeV o .. 6E 17 cm-2 • 
0.01 lnP(100) 
0.00 
0 100 200 300 iOO 500 
Temperature (°C) 
Figure 2(a) 
a 
348 I I I I I I I I 14 
411 
+ lnP (1 00) 
.-
-
+ 12 + -
...-----.. 347 -
..--
-I + • 
...-----.. 
..--
E + I () r- + - 10 E "'--" () 
t "'--" • • -
346 - :::r: :::r: r (/) 
- 8 0 
-
>- 3: C) -
- w 0:::: + 
w + z 
z 
- 6 _j w 345 - + 
• 
• • 
-
• + -1 r-
*-• • 4 
• 
344 I I l l l l l l -1 
0 100 200 300 400 
ANNEALING TEMP. (C) 
Figure 2(b) 
9 
BB-37 
BB-38 
BB-39 
BB-40 
BB-41 
BB-42 
BB-43 
BB-44 
BB-45 
BB-46 
BB-47 
BB-48 
~~9 
BB-50 
BB-51 
BB-52 
BB-53 
BB-54 
BB-55 
BB-56 
BROWN BAG PREPRINT SERIES 
Liquid Target Generation Techniques in Molecular Dynamics Studies 
of Sputtering 
The Measurement of Eolian Sand Ripple Cross-Sectional Shapes 
Booming Dunes 
Dynamical Simulations of Granular Materials Using Concurrent Processing 
Computers 
A Simulation Study of the Low Energy Ejecta Resulting from Single 
Impacts in Eolian Saltation 
Particles in Motion: The Case of the Loaded Die 
Comparison of Several Nuclear Reaction Techniques for Hydrogen Depth 
Profiling in Solids 
Surface Cracking of Vitreous Fused Silica Induced by MeV Ion Beam 
Bombardment 
Computer Simulation of the Mechanical Sorting of Grains 
Feedback in Wind-Blown Sand Transport 
Scratching the Surface 
Computing with Particles 
Faunal Sorting of Sediments: Some Experiments with Desert Beetles Genus 
(Eleodes) 
The Impact Process in Eolian Saltation: Two-Dimensional Studies 
The Ubiquity of C-H Bond Breaking by MeV Ion Irradiation 
Electrical and Structural Changes in GaAs Crystals from High-Energy, 
Heavy-Ion Implants 
Hydrogen Depth Profiling in Solids: A Comparison of Several Resonant 
Nuclear Reaction Techniques 
Response of -Desert Pavement to Surface Disturbances 
Simulation Studies of Collision Cascades in Liquid In Targets 
A Theoretical Model for Eolian Impact Ripples 


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Radiation Defect-Induced Lattice Contraction of InP

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