Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ion implantation. For doses up to 5 × 10^(15) cm^(−2), no atomic intermixing of the sublayers is observed by backscattering spectrometry. However, with x-ray rocking curve measurements, significant changes in the strain profiles are detected for implantations with doses as low as 7 × 10^(12) cm^(−2). Interpretation of the rocking curves suggests that low-dose implantations release strain in the Al_xGa_(1−x) As sublayers. The strain profile recovery of the implanted samples, upon annealing at ∼ 420°C, implies that the damage caused by implantation is largely reversible