Radiation Study of a 4Mbit Ferroelectric RAM for Space Applications

Abstract

International audienceWe present a Heavy Ion radiation study for a ultra low power non volatile 4Mbit ferroelectric memory(FRAM) for space applications manufactured on a 130nm domestic CMOS technology node. The radiation summary includes SEU data from Heavy Ions static as well as dynamic stress tests. The FRAM device meets the space level upset criteria for static device stress, but requires additional system mitigation for dynamic device stress