Pump-Probe Measurements of Free Carrier Lifetimes in Extrinsic Germanium at FELBE

Abstract

The capture of free holes and electrons in germanium (Ge) doped by gallium (Ga) or antimony (Sb) as well as is highly doped and compensated germanium has been studied by a time-resolved pump-probe experiment with the free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf. Results were presented with focus on data evaluation of pump-probe signals