Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)

Abstract

111 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.Ope