The SOP for MicroChem SPR-220 7.0 at the Quattrone Nanofabrcation Facility is provided along with thickness vs. dose-to-clear and contrast curve data. The document is intended to provide a starting point when using MicroChem SPR-220 7.0

Lopez, Gerald G

Wood, Steven

English

ScholarlyCommons@Penn

University of PennsylvaniaScholarlyCommonsProtocols and Reports Browse by Type4-27-2016SUSS MicroTec MA6 Gen3 – MicroChemSPR-220 7.0 Thickness vs. Dose-to-Clear andContrast Curve DataSteven WoodUniversity of Pennsylvania, stewood@seas.upenn.eduGerald G. LopezSingh Center for Nanotechnology, lopezg@seas.upenn.eduFollow this and additional works at: http://repository.upenn.edu/scn_protocolsPart of the Nanoscience and Nanotechnology CommonsThis paper is posted at ScholarlyCommons. http://repository.upenn.edu/scn_protocols/22For more information, please contact repository@pobox.upenn.edu.Wood, Steven and Lopez, Gerald G., "SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear andContrast Curve Data", Protocols and Reports. Paper 22.http://repository.upenn.edu/scn_protocols/22SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs.Dose-to-Clear and Contrast Curve DataSummary/DescriptionThe SOP for MicroChem SPR-220 7.0 at the Quattrone Nanofabrcation Facility is provided along withthickness vs. dose-to-clear and contrast curve data. The document is intended to provide a starting point whenusing MicroChem SPR-220 7.0.KeywordsSPR220, MicroChem, SUSS, MA6, SPR-220DisciplinesNanoscience and NanotechnologyThis technical report is available at ScholarlyCommons: http://repository.upenn.edu/scn_protocols/22 Standard Operating Procedure Document No: Revision: SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Contrast Curve Data Author: Steven Wood, Gerald Lopez    Page 1 Goal:   Accurately gauge the optimal dose for MicroChem SPR-220 7.0 using the SUSS MicroTec MA-6 Gen3.  Materials:  MicroChem SPR-220 7.0 Photoresist  SurPass 4000 Primer  MicroChem MF-26A Developer  Acetone  Isopropyl Alcohol (IPA)  4 inch Silicon Wafers Equipment:  Torrey Pines Scientific Hotplate  ReynoldsTech 1000 RPM/second spinner  SUSS MicroTec MA-6 Gen3 Mask Aligner  Benchmark Multi-Transmission mask Protocol:  Prime 1. Mount wafer and ensure that it is centered. 2. Deposit 7 milliliters of SURPASS 4000 in the center of the wafer. 3. Spin on primer at 3000 RPM for 45 seconds. 4. Rinse with IPA with 15 seconds left on the spin cycle. Coat 1. Mount wafer and ensure that it is centered. 2. Deposit 7 milliliters of SPR-220 7.0 photoresist in the center of the wafer. 3. Spin on photoresist at 1500 RPM for 60 Seconds. Resulting thickness is about 10.9um (measured after Soft Bake).  Soft Bake 1. Bake wafer at 115 °C for 60 seconds.  Expose 1. Expose wafer using Benchmark mask.  Develop 1. Dispense approximately 150 milliliters of MF-26A in two containers. 2. Fully submerge the exposed wafer. 3. Agitate and develop the wafer for 60 seconds. 4. Fully submerge the wafer in the fresh bath. 5. Agitate and develop for 60 seconds. 6. Remove wafer, rinse with DI water and dry.    Standard Operation Procedure SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Contrast Curve Data  Document No.: Revision: Author: Steven Wood url:  Page 2 Results:  Measured feature size 100um2.  Use the following chart to determine the dose needed to clear for a specific resist thickness for SPR220. For example, if a spin condition yields a 4um thickness for SPR-220, the suggested starting dose to use would be roughly between 55-60mJ/cm2.       y = -2E-08x4 + 1E-05x3 - 0.0019x2 + 0.2095x - 3.4077-1.0000.0001.0002.0003.0004.0005.0006.0007.0008.0009.00010.00011.00012.0000.000 20.000 40.000 60.000 80.000 100.000 120.000 140.000 160.000 180.000 200.000Resist Thickness [µm]Dose [mJ/cm2]MicroChem SPR-220 Dose vs. Resist Depth/Thickness Standard Operation Procedure SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Contrast Curve Data  Document No.: Revision: Author: Steven Wood url:  Page 3 Contrast Curve:                 Dose [mJ/cm2] Height [um] Remaining Resist [um] 6.30 0.000 10.900 7.35 0.000 10.900 8.40 0.000 10.900 9.45 0.000 10.900 10.50 0.000 10.900 11.55 0.000 10.900 12.60 0.000 10.900 12.60 0.000 10.900 13.65 0.000 10.900 14.70 0.000 10.900 14.70 0.000 10.900 16.80 0.000 10.900 18.90 0.000 10.900 21.00 0.065 10.836 23.10 0.393 10.507 25.20 0.850 10.050 27.30 1.124 9.776 29.40 1.530 9.371 33.60 1.998 8.902 37.80 2.404 8.496 42.00 2.674 8.227 46.20 3.137 7.763 50.40 3.492 7.409 54.60 3.740 7.160 58.80 4.082 6.818 67.20 4.672 6.228 75.60 5.210 5.690 84.00 5.656 5.244 92.40 6.303 4.597 100.80 6.658 4.243 109.20 7.038 3.862 117.60 7.475 3.425 134.40 8.270 2.630 151.20 9.105 1.795 168.00 9.891 1.010 184.80 10.750 0.150 201.60 10.900 0.000 218.40 10.900 0.000 235.20 10.900 0.000 336.00 10.900 0.000  0.0002.0004.0006.0008.00010.00012.0000.00 100.00 200.00 300.00 400.00MicroChem SPR220 7.0 Contrast Curve

SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data

https://repository.upenn.edu/cgi/viewcontent.cgi?article=1023&amp;context=scn_protocols

SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data

Abstract

Similar works

Full text

Available Versions

ScholarlyCommons@Penn