Bryan, Jonathan

Lopez, Gerald G

Wood, Steven

English

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SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve Data

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University of PennsylvaniaScholarlyCommonsProtocols and Reports Browse by Type3-4-2016SUSS MicroTec MA6 Gen3 - S1813 ContrastCurve DataJonathan Bryanjonbryan@seas.upenn.eduSteven WoodUniversity of Pennsylvania, stewood@seas.upenn.eduGerald G. LopezSingh Center for Nanotechnology, lopezg@seas.upenn.eduFollow this and additional works at: http://repository.upenn.edu/scn_protocolsPart of the Electronic Devices and Semiconductor Manufacturing Commons, and theNanotechnology Fabrication CommonsThis paper is posted at ScholarlyCommons. http://repository.upenn.edu/scn_protocols/19For more information, please contact repository@pobox.upenn.edu.Bryan, Jonathan; Wood, Steven; and Lopez, Gerald G., "SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve Data", Protocols andReports. Paper 19.http://repository.upenn.edu/scn_protocols/19SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve DataDisciplinesElectronic Devices and Semiconductor Manufacturing | Nanotechnology FabricationThis technical report is available at ScholarlyCommons: http://repository.upenn.edu/scn_protocols/19 Standard Operation Procedure Document No:  Revision: 2016-02-18 SUSS MicroTec MA6 Gen3 Mask Aligner and MicroChem S1813 Resist Authors: Jonathan Bryan, Steven Wood, Gerald Lopez    Page 1 Materials:  MicroChem S1813 Photoresist  DisChem SURPASS 4000 Primer (http://www.discheminc.com/)  MicroChem MF-319 Developer  Acetone  Isopropyl Alcohol (IPA)  4 inch Silicon Wafers  Benchmark Technologies multi-transmission photomask  Equipment:  Torrey Pines Scientific hotplate  Reynoldstech 1000 RPM/second spinner   SUSS MicroTec MA6 Gen3 Mask Aligner  Filmetrics F40 film thickness measurement tool   Protocol:  Prime and Coat 1. Mounted wafer and ensured that it was centered 2. Deposited ~7 milliliters of SurPass 4000 in the center of the wafer 3. Spun on primer at 3000 RPM for 30 seconds 4. Rinsed with IPA  5. Deposited ~14 milliliters of S1813 photoresist in the center of the wafer 6. Spun on photoresist at 4500 RPM for 60 Seconds   Soft Bake 1. Baked wafer at 100° C for 60 seconds  Expose and Develop 1. Exposed at 35 mJ/cm2 using SUSS MA6 mask aligner with 30 micron proximity gap and multi-transmission photomask 2. Developed in Microposit MF-319 for 60s while agitating  Thickness Measurement 1. Measured remaining resist at different exposure doses using Filmetrics F40         Standard Operation Procedure SUSS MicroTec MA6 Gen3 Mask Aligner and MicroChem S1813 Resist  Document No.: Revision: Author: url:  Page 2 Dose (mJ/cm2) Thickness Measured (microns) 35 0.000 24.5 0.320 22.75 0.498 21 0.626 19.25 0.722 17.5 0.846 15.75 0.992 14 1.215 12.25 1.271 10.5 1.3    E0 = 35 mJ/cm2 

https://repository.upenn.edu/cgi/viewcontent.cgi?article=1020&amp;context=scn_protocols

SUSS MicroTec MA6 Gen3 - S1813 Contrast Curve Data

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