Kang, Jisoo

English

Kosmopolis

University of Pennsylvania
ScholarlyCommons
Tool Data Browse by Type
4-25-2015
Performance Check 1 on Elionix E-beam writer
Jisoo Kang
jisoo@seas.upenn.edu
Follow this and additional works at: http://repository.upenn.edu/scn_tooldata
This paper is posted at ScholarlyCommons. http://repository.upenn.edu/scn_tooldata/4
For more information, please contact libraryrepository@pobox.upenn.edu.
Kang, Jisoo, "Performance Check 1 on Elionix E-beam writer", Tool Data. Paper 4.
http://repository.upenn.edu/scn_tooldata/4
Performance Check 1 on Elionix E-beam writer
Keywords
Elionix E-beam writer
Creative Commons License
This work is licensed under a Creative Commons Attribution-Share Alike 4.0 License.
This technical report is available at ScholarlyCommons: http://repository.upenn.edu/scn_tooldata/4
On-site Inspection (Graduate Student Fellow Program)  
Beam Current = 100 pA  
Prepared by Jisoo Kang (9/20/2014)  
• A4 495 PMMA film  
• Thickness: 160-170 nm (using F40)  
• Spin coat: 3000 rpm, 60 sec  
• Bake: 180 °C, 5 min, on a hot plate  
• Develop: Methyl Isobutyl Ketone (MIBK): IPA = 1:3, 60 sec  
• Rinse: IPA  
• Acceleration voltage: 50 kV  
• Resist Sensitivity assumed: 500 µC/cm2  
• Field size: 60000 dot x 60000 dot  
• Area: 75 µm x 75 µm  
• Dose Time: 0.07813 µsec/dot  
Line and Space  
 
 
 
Dots  
 
 
• The beam current of more than 100 pA shows the following result. As can be seen in the 
SEM image, the 20 nm dot is confirmed. The 10 nm dot is partially formed, but the 
exposure is still small.  
 
 
Blocks  
 
Stitching Error  
Prepared by Jisoo Kang (1/12/2015)  
• Beam current = 100 pA  
• The condition is shown above. (Field size = 75 µm x 75 µm)  
• The stitching error is ~48 nm.  
 
Beam Current = 50 pA  
Prepared by Jisoo Kang (10/20/2014)  
• A4 495 PMMA diluted by anisole  
• Thickness: ~60 nm (using F40)  
o Note: A 160 nm thick 495 PMMA film did not work at 50 pA beam current and 
500 µC/cm2.  
• Spin coat: 3000 rpm, 60 sec  
• Bake: 180 °C, 5 min, on a hot plate  
• Develop: Methyl Isobutyl Ketone (MIBK): IPA = 1:3, 60 sec  
• Rinse: IPA  
• Acceleration voltage: 50 kV  
• Resist Sensitivity assumed: 500 µC/cm2  
• Field size: 60000 dot x 60000 dot  
• Area: 75 µm x 75 µm  
• Dose Time: 0.1563 µsec/dot  
Line and Space  
• SEM images of e-beam dosage dependence of lines ans spaces on 495 PMMA on Si 
wafer.  
o Line: 40, 20, 10 nm  
o Space: 200, 100, 80, 60, 40, 20, and 10 nm  
o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).  
 
Dots  
• SEM images of e-beam dosage dependence of dots on 495 PMMA on Si wafer.  
o Diameter setpoint: 50, 40, 30, 20, and 10 nm  
o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).  
 
  
Beam Current = 20 pA  
Prepared by Jisoo Kang (11/17/2014)  
• A4 495 PMMA diluted by anisole  
• Thickness: ~60 nm (using F40)  
o Note: A 160 nm thick 495 PMMA film did not work at 50 pA beam current and 
500 µC/cm2.  
• Spin coat: 3000 rpm, 60 sec  
• Bake: 180 °C, 5 min, on a hot plate  
• Develop: Methyl Isobutyl Ketone (MIBK): IPA = 1:3, 60 sec  
• Rinse: IPA  
• Acceleration voltage: 50 kV  
• Resist Sensitivity assumed: 500 µC/cm2  
• Field size: 60000 dot x 60000 dot  
• Area: 75 µm x 75 µm  
• Dose Time: 0.3906 µsec/dot  
  
Line and Space  
• SEM images of e-beam dosage dependence of lines ans spaces on 495 PMMA on Si 
wafer.  
o Line: 10 nm  
o Space: 200, 100, 80, 60, 40, 20, and 10 nm  
o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).  
 
  
Dots  
• SEM images of e-beam dosage dependence of dots on 495 PMMA on Si wafer.  
o Diameter setpoints: 50, 40, 30, 20, and 10 nm  
o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).  
 
 


Performance Check 1 on Elionix E-beam writer

ScholarlyCommons@Penn

University of PennsylvaniaScholarlyCommonsTool Data Browse by Type4-25-2015Performance Check 1 on Elionix E-beam writerJisoo Kangjisoo@seas.upenn.eduFollow this and additional works at: http://repository.upenn.edu/scn_tooldataThis paper is posted at ScholarlyCommons. http://repository.upenn.edu/scn_tooldata/4For more information, please contact libraryrepository@pobox.upenn.edu.Kang, Jisoo, "Performance Check 1 on Elionix E-beam writer", Tool Data. Paper 4.http://repository.upenn.edu/scn_tooldata/4Performance Check 1 on Elionix E-beam writerKeywordsElionix E-beam writerCreative Commons LicenseThis work is licensed under a Creative Commons Attribution-Share Alike 4.0 License.This technical report is available at ScholarlyCommons: http://repository.upenn.edu/scn_tooldata/4On-site Inspection (Graduate Student Fellow Program)  Beam Current = 100 pA  Prepared by Jisoo Kang (9/20/2014)  • A4 495 PMMA film  • Thickness: 160-170 nm (using F40)  • Spin coat: 3000 rpm, 60 sec  • Bake: 180 °C, 5 min, on a hot plate  • Develop: Methyl Isobutyl Ketone (MIBK): IPA = 1:3, 60 sec  • Rinse: IPA  • Acceleration voltage: 50 kV  • Resist Sensitivity assumed: 500 µC/cm2  • Field size: 60000 dot x 60000 dot  • Area: 75 µm x 75 µm  • Dose Time: 0.07813 µsec/dot  Line and Space     Dots    • The beam current of more than 100 pA shows the following result. As can be seen in the SEM image, the 20 nm dot is confirmed. The 10 nm dot is partially formed, but the exposure is still small.    Blocks   Stitching Error  Prepared by Jisoo Kang (1/12/2015)  • Beam current = 100 pA  • The condition is shown above. (Field size = 75 µm x 75 µm)  • The stitching error is ~48 nm.   Beam Current = 50 pA  Prepared by Jisoo Kang (10/20/2014)  • A4 495 PMMA diluted by anisole  • Thickness: ~60 nm (using F40)  o Note: A 160 nm thick 495 PMMA film did not work at 50 pA beam current and 500 µC/cm2.  • Spin coat: 3000 rpm, 60 sec  • Bake: 180 °C, 5 min, on a hot plate  • Develop: Methyl Isobutyl Ketone (MIBK): IPA = 1:3, 60 sec  • Rinse: IPA  • Acceleration voltage: 50 kV  • Resist Sensitivity assumed: 500 µC/cm2  • Field size: 60000 dot x 60000 dot  • Area: 75 µm x 75 µm  • Dose Time: 0.1563 µsec/dot  Line and Space  • SEM images of e-beam dosage dependence of lines ans spaces on 495 PMMA on Si wafer.  o Line: 40, 20, 10 nm  o Space: 200, 100, 80, 60, 40, 20, and 10 nm  o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).   Dots  • SEM images of e-beam dosage dependence of dots on 495 PMMA on Si wafer.  o Diameter setpoint: 50, 40, 30, 20, and 10 nm  o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).     Beam Current = 20 pA  Prepared by Jisoo Kang (11/17/2014)  • A4 495 PMMA diluted by anisole  • Thickness: ~60 nm (using F40)  o Note: A 160 nm thick 495 PMMA film did not work at 50 pA beam current and 500 µC/cm2.  • Spin coat: 3000 rpm, 60 sec  • Bake: 180 °C, 5 min, on a hot plate  • Develop: Methyl Isobutyl Ketone (MIBK): IPA = 1:3, 60 sec  • Rinse: IPA  • Acceleration voltage: 50 kV  • Resist Sensitivity assumed: 500 µC/cm2  • Field size: 60000 dot x 60000 dot  • Area: 75 µm x 75 µm  • Dose Time: 0.3906 µsec/dot    Line and Space  • SEM images of e-beam dosage dependence of lines ans spaces on 495 PMMA on Si wafer.  o Line: 10 nm  o Space: 200, 100, 80, 60, 40, 20, and 10 nm  o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).     Dots  • SEM images of e-beam dosage dependence of dots on 495 PMMA on Si wafer.  o Diameter setpoints: 50, 40, 30, 20, and 10 nm  o Dose slope: 0.5 (50%), 1.0 (100%), and 1.5 (150%).    

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Performance Check 1 on Elionix E-beam writer

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