Bryan, Jonathan

LOPEZ, GERALD G

English

ScholarlyCommons@Penn

University of PennsylvaniaScholarlyCommonsProtocols and Reports Browse by Type2-18-2016SUSS MicroTec MA6 Gen3 - S1805 ContrastCurve DataJonathan BryanUniversity of Pennsylvania, jonbryan@seas.upenn.eduGERALD G. LOPEZSingh Center for Nanotechnology, lopezg@seas.upenn.eduFollow this and additional works at: http://repository.upenn.edu/scn_protocolsPart of the Nanoscience and Nanotechnology CommonsThis paper is posted at ScholarlyCommons. http://repository.upenn.edu/scn_protocols/17For more information, please contact repository@pobox.upenn.edu.Bryan, Jonathan and LOPEZ, GERALD G., "SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data", Protocols and Reports. Paper17.http://repository.upenn.edu/scn_protocols/17SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve DataKeywordsS1805, positive resist, MA6DisciplinesNanoscience and NanotechnologyThis technical report is available at ScholarlyCommons: http://repository.upenn.edu/scn_protocols/17 Standard Operation Procedure Document No:  Revision: 2016-02-18 SUSS MicroTec MA6 Gen3 Mask Aligner and MicroChem S1805 Resist Authors: Jonathan Bryan, Gerald Lopez, Steven Wood    Page 1 Materials:  MicroChem S1805 Photoresist  DisChem SURPASS 4000 Primer (http://www.discheminc.com/)  MicroChem MF-319 Developer  Acetone  Isopropyl Alcohol (IPA)  4 inch Silicon Wafers  Benchmark Technologies multi-transmission photomask  Equipment:  Torrey Pines Scientific hotplate  Reynoldstech 1000 RPM/second spinner   SUSS MicroTec MA6 Gen3 Mask Aligner  Filmetrics F40 film thickness measurement tool   Protocol:  Prime and Coat 1. Mounted wafer and ensured that it was centered 2. Deposited ~7 milliliters of SurPass 4000 in the center of the wafer 3. Spun on primer at 3000 RPM for 30 seconds 4. Rinsed with IPA  5. Deposited ~14 milliliters of S1805 photoresist in the center of the wafer 6. Spun on photoresist at 4500 RPM for 60 Seconds   Soft Bake 1. Baked wafer at 100° C for 60 seconds  Expose and Develop 1. Exposed at 35 mJ/cm2 using Karl Suss MA6 mask aligner with 30 micron proximity gap and multi-transmission photomask 2. Developed in Microposit MF-319 for 60s while agitating  Thickness Measurement 1. Measured remaining resist at different exposure doses using Filmetrics F40         Standard Operation Procedure Karl Suss MA6 Mask Aligner &  MicroChem S1805 Resist  Document No.: Revision: Author: url:  Page 2 Dose Thickness Measured 5.4 0.386 6.3 0.348 6.6 0.317 7.2 0.231 7.7 0.242 8.1 0.132 8.8 0.194 9 0.101 9.9 0.11 10.8 0.096 11 0 11.7 0 12.1 0 12.6 0 13.2 0     

SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data

Kosmopolis

University of Pennsylvania
ScholarlyCommons
Protocols and Reports Browse by Type
2-18-2016
SUSS MicroTec MA6 Gen3 - S1805 Contrast
Curve Data
Jonathan Bryan
University of Pennsylvania, jonbryan@seas.upenn.edu
GERALD G. LOPEZ
Singh Center for Nanotechnology, lopezg@seas.upenn.edu
Follow this and additional works at: http://repository.upenn.edu/scn_protocols
Part of the Nanoscience and Nanotechnology Commons
This paper is posted at ScholarlyCommons. http://repository.upenn.edu/scn_protocols/17
For more information, please contact repository@pobox.upenn.edu.
Bryan, Jonathan and LOPEZ, GERALD G., "SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data", Protocols and Reports. Paper
17.
http://repository.upenn.edu/scn_protocols/17
SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data
Keywords
S1805, positive resist, MA6
Disciplines
Nanoscience and Nanotechnology
This technical report is available at ScholarlyCommons: http://repository.upenn.edu/scn_protocols/17
 
Standard Operation Procedure Document No:  
Revision: 2016-02-18 
SUSS MicroTec MA6 Gen3 Mask 
Aligner and MicroChem S1805 Resist 
Authors: Jonathan Bryan, Gerald 
Lopez, Steven Wood 
 
 
 Page 1 
Materials: 
 MicroChem S1805 Photoresist 
 DisChem SURPASS 4000 Primer (http://www.discheminc.com/) 
 MicroChem MF-319 Developer 
 Acetone 
 Isopropyl Alcohol (IPA) 
 4 inch Silicon Wafers 
 Benchmark Technologies multi-transmission photomask 
 
Equipment: 
 Torrey Pines Scientific hotplate 
 Reynoldstech 1000 RPM/second spinner  
 SUSS MicroTec MA6 Gen3 Mask Aligner 
 Filmetrics F40 film thickness measurement tool  
 
Protocol: 
 Prime and Coat 
1. Mounted wafer and ensured that it was centered 
2. Deposited ~7 milliliters of SurPass 4000 in the center of the wafer 
3. Spun on primer at 3000 RPM for 30 seconds 
4. Rinsed with IPA  
5. Deposited ~14 milliliters of S1805 photoresist in the center of the wafer 
6. Spun on photoresist at 4500 RPM for 60 Seconds 
  
Soft Bake 
1. Baked wafer at 100° C for 60 seconds 
 
Expose and Develop 
1. Exposed at 35 mJ/cm2 using Karl Suss MA6 mask aligner with 30 micron proximity gap and multi-
transmission photomask 
2. Developed in Microposit MF-319 for 60s while agitating 
 
Thickness Measurement 
1. Measured remaining resist at different exposure doses using Filmetrics F40  
 
 
 
 
 
 
 
Standard Operation Procedure 
Karl Suss MA6 Mask Aligner &  
MicroChem S1805 Resist 
 
Document No.: Revision: 
Author: url:  Page 2 
Dose Thickness Measured 
5.4 0.386 
6.3 0.348 
6.6 0.317 
7.2 0.231 
7.7 0.242 
8.1 0.132 
8.8 0.194 
9 0.101 
9.9 0.11 
10.8 0.096 
11 0 
11.7 0 
12.1 0 
12.6 0 
13.2 0 
 
 
 
 


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SUSS MicroTec MA6 Gen3 - S1805 Contrast Curve Data

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