Azadi, Mohsen

de Villafranca, Glen

Griggs, Georgia

Lopez, Gerald

English

ScholarlyCommons@Penn

University of PennsylvaniaScholarlyCommonsProtocols and Reports Browse by Type12-21-2018CSAR 62 Spin CurveMohsen AzadiSingh Center for Nanotechnology, azadi@seas.upenn.eduGeorgia GriggsSingh Center for Nanotechnology, ggriggs@seas.upenn.eduGlen de VillafrancaSingh Center for Nanotechnology, devilla@seas.upenn.eduGerald LopezSingh Center for Nanotechnology, lopezg@seas.upenn.eduFollow this and additional works at: https://repository.upenn.edu/scn_protocolsPart of the Electronic Devices and Semiconductor Manufacturing Commons, and theNanotechnology Fabrication CommonsThis paper is posted at ScholarlyCommons. https://repository.upenn.edu/scn_protocols/48For more information, please contact repository@pobox.upenn.edu.Azadi, Mohsen; Griggs, Georgia; de Villafranca, Glen; and Lopez, Gerald, "CSAR 62 Spin Curve", Protocols and Reports. Paper 48.https://repository.upenn.edu/scn_protocols/48CSAR 62 Spin CurveKeywordsCSAR, CSAR 62, Spin Curve, Curve, SpinDisciplinesElectronic Devices and Semiconductor Manufacturing | Nanotechnology FabricationThis technical report is available at ScholarlyCommons: https://repository.upenn.edu/scn_protocols/48 Technical Report CSAR 62 Spin Curve Revision: 20171221 Author: Glen de Villafranca, Georgia Griggs and Gerald Lopez, Ph.D.    Page 1 Goal:   This report documents the spin curves for CSAR 62 electron beam lithography resist from AllResist. The aim is to provide a self-generated spin curve for CSAR 62.  Materials: • CSAR 62 from AllResist (www.allresist.com) • Anisole • Si wafers • Two 80mL beakers • One amber bottle  Equipment: • ReynoldsTech Spinner • Torrey Pines Scientific Hotplate • Filmetrics F50 • Digital Scale to measure dilutions  Protocol: Coat 1. Mount wafer and ensure that it is centered. 2. Spin wafer at a fixed RPM for 60 seconds.  Soft Bake 1. Bake wafer at 180 °C for 90 seconds and allow wafer to cool after removal. Measurement 1. Allow the Filmetrics F50 light to warm up for at least 5 minutes. 2. Click Baseline… to calibrate the tool using the SiO2 and Si standards. 3. Mount wafer and select the CSAR on Si recipe. 4. Edit the recipe so that 85 points are measured on the wafer with a 1 cm edge exclusion. 5. Click Start to measure the resist thickness of each wafer.  Results:  RPMs Resist Thickness (nm) 1000 386.3 2000 278.6 3000 229.7 4000 201.4 5000 177.1 6000 161.6    

CSAR 62 Spin Curve

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CSAR 62 Spin Curve

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