Briddon PR

Iwata H

Lindefelt U

Oberg S

The results of supercell calculations of the electronic structure of single and multiple stacking faults (SF) SiC polytypes 3C, 4H, 6H and 15R were reported. The number of bound states, their energies and wave function localizations were well described by a quantum well model. The electronic polarization of the host crystal gave rise to a clear displacement of the wave functions for the localized gap states

Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults

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