This paper considers misfit dislocation nucleation and propagation in dilute magnetic semiconductor heterostructures in the CdTe-ZnTe-MnTe system. It is shown that, where the deposit is in tension, 1/2 \u3c 110 \u3e dislocations with inclined Burgers vectors propagate by glide along interfacial \u3c 110 \u3e directions and may dissociate giving intrinsic stacking faults. In cases where the deposit is in compression, 1/2 \u3c 110 \u3e dislocations show no evidence of dissociation and propagate by extensive cross-slip to give networks of dislocations close to interfacial \u3c 100 \u3e directions.
Evidence for dislocation sources in ZnTe/GaSb films is presented. ZnTe films contained stacking fault pyramids, single Frank faults and a new type of diamond defect are present at densities up to about 107 cm-2. Analysis showed that the diamond defects, which were four-sided defects on {111} planes with \u3c 110 \u3e edges, were of vacancy type with 1/3 \u3c 111 \u3e Frank Burgers vectors and intrinsic stacking faults. Although faulted defects showed no tendency to grow by climb, evidence is given for an unfaulted reaction in which a glissile 1/2 \u3c 110 \u3e dislocation is generated. This new model for dislocation nucleation is discussed
