A fault detection and prediction method for insulated-gate bipolar transistors (IGBTs) has been improved over the past decades to reduce system downtime. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: the necessity to operate at high voltage in the switching environment and the measurement precision of the gate-threshold voltage or collector-to-emitter voltage. This thesis presents a wear-fatigue estimation framework that consists of collector-to-emitter measurement, power loss calculation, and thermal lifetime prediction model. The measurement circuit enables the estimation of power loss across a variety of IGBT modules with minimum impact on system reliability.LimitedAuthor requested closed access (OA after 2yrs) in Vireo ETD syste
