Antoniou, Marina

Arvanitopoulos, Anastasios

Gyftakis, Konstantinos N.

Lophitis, Neophytos

Perkins, Samuel

With Silicon (Si) technology reaching its technological maturity and limitations, the focus of power electronics industry is shifting to wide bandgap materials such as the Silicon Carbide (SiC) and Gallium Nitride (GaN). The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H-SiC, has lower growth cost which makes it of special interest. Technology Computer Aided Design (TCAD) modeling of the 3C-SiC material properties is currently at its infancy. In this paper, the 3C-SiC material parameters for TCAD are introduced as a major step towards the design of functional and optimized devices

3C-SiC material parameters for accurate TCAD modeling and simulation

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