The 3C-Silicon Carbide (SiC) has been investigated as the suitable material for medium rated power device applications. Compared to growing 4H-SiC on hexagonal SiC, growing 3C-SiC on Si wafers is quite cost-effective and has recently resulted in epitaxial layers with thickness capable of supporting voltages of this magnitude. In this work, the power law of 3C-SiC is derived for the first time towards predicting the breakdown voltage of vertical Schottky Barrier Diodes (SBDs) based on this wide bandgap (WBG) semiconductor material. To ensure the predicted blocking capabilities from the 3C-SiC power law expression will be supported to the largest extend in fabricated SBDs, termination topologies are adjusted and investigated by performing extensive Technology Computer Aided Design (TCAD) simulations. A comprehensive map is developed to allow the decision on the termination concept for 3C-SiC-on-Si SBDs to be made based on efficiency and area requirement criteria
