Analysis and design of high-transconductance RF mosfet voltage to-current converters

Abstract

The research described in this thesis is concerned with analysis and design of "HighTransconductance RF MOSFET Voltage-to-Current (V-I) Converters". Various V-I converter circuits published in the past have been reviewed by the author in order to understand the different techniques employed to improve transconductance (Gt), linear operating range and total harmonic distortion (THO). Throughout this research, the emphasis has been to improve the above mentioned parameters. All the V-I converter circuits reported have been simulated using PSPICE and the results compared with the values obtained by theoretical analysis. Some of the results of this work have been already reported by the author in the technical literature. (See Chapter 9, at the end of this thesis, where reference to two publications by the author is given.) It was essential to obtain accurate CMOS device parameters values, such as Early Voltage, transconductance parameter ratios!! (gm/gds), X (gmbl'gm) and inter-electrode capacitances, to facilitate the design the prQcess. This was achieved using an extensive set of simulations for the transistor operating under different bias conditions. Furthermore, a measurement technique, thought to be novel, for the direct determination of the transconductance ratios!! and X is proposed. In the next part of the work several types of current mirror are compared against the standard current mirrors, using analytical and simulation methods. Furthermore several MOSFET V-I converter designs were critically reviewed to understand the various existing techniques and their limitations. Two novel techniques, Drain-Source Feedback Circuits (DSFCs) and Drain-Gate Feedback Circuits (OGFCs) ere implemented with a new temperature-compensation scheme, designed to operate well in an industrial environment (-40°C - +8S°C). It is found that the best types of V -I converters were the DSFCs which, offer a more accurate value of Gt (3.386mS) and the THO less than -S7dB for a differential input operating range SOOm V at 1 GHz with a 3V total rail voltage. The OGFC circuits were also meet the initial design targets, the value of THO is less then -SOdB, and operating in the Giga hertz frequency range is possible. Preliminary investigation on future work shows promising results