Formation of moir\'{e} superlattices is common in Van der Waals
heterostructures as a result of the mismatch between lattice constants and
misalignment of crystallographic directions of the constituent two-dimensional
crystals. We discuss theoretically electron transport in a Van der Waals
tunnelling transistor in which one of the electrodes is made of two crystals
forming a moir\'{e} superlattice at their interface. By investigating
structures containing either the aligned graphene/hexagonal boron nitride
heterostructure or twisted bilayer graphene, we show that negative differential
resistance is possible in such transistors as a consequence of the
superlattice-induced changes in the electronic density of states and without
the need of momentum conserving tunnelling present in high-quality exfoliated
devices