NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.

Abstract

The SEM EBIC contrast for individual screw and 60 degree dislocations formed in high-purity, n-type 10**1**5 cm** minus **3 silicon by deformation has been measured and found to vary with both specimen temperature and electron beam current. A new theory of recombination at dislocations has been developed and applied to the EBIC method. The new theory explains the experimental results and enables parameters associated with the recombination process at the individual dislocations, e. g. energy level, density of states, etc. , to be deduced