Ion irradiation of GeSi Si strained-layer heterostructures

Abstract

The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with 1 MeV Si-28(+) at 253 degrees C. During subsequent annealing to 750 degrees C, the strain is partially recovered but relaxes again at temperatures > 750 degrees C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer