The feasibility of Veselago lensing in graphene with a p-n junction is
investigated numerically for realistic injection leads. Two different set-ups
with two narrow leads are considered with absorbing or reflecting side edges.
This allows us to separately determine the influence of scattering on electron
focusing for the edges and the p-n interface. Both semiclassical and
tight-binding simulations show a distinctive peak in the transmission
probability that is attributed to the Veselago lensing effect. We investigate
the robustness of this peak on the width of the injector, the position of the
p-n interface and different gate potential profiles. Furthermore, the influence
of scattering by both short- and long-range impurities is considered.Comment: 10 pages, 7 figure