Shuttling of Spin Polarized Electrons in Molecular Transistors

Abstract

Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a $C_{60}$-based molecular transistor with magnetic (Ni) electrodes is discussed [A.~N.~Pasupathy et al., Science 306, 86 (2004)].Comment: Submitted to a special issue of "Synthetic Metals" to appear in March 201