We report a detailed analysis of magneto-transport properties of top- and
back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in
magneto-resistance, carrier density, and mobility of the two-dimensional
electron liquid present at the interface is achieved by sweeping top and back
gate voltages. Analyzing those changes with respect to the carrier density
tuning, we observe that the back gate strongly modifies the electron mobility
while the top gate mainly varies the carrier density. The evolution of the
spin-orbit interaction is also followed as a function of top and back gating.Comment: 15 pages, 6 figure