Transparent conducting oxides have recently gained great attention as
CMOS-compatible materials for applications in nanophotonics due to their low
optical loss, metal-like behavior, versatile/tailorable optical properties, and
established fabrication procedures. In particular, aluminum doped zinc oxide
(AZO) is very attractive because its dielectric permittivity can be engineered
over a broad range in the near infrared and infrared. However, despite all
these beneficial features, the slow (> 100 ps) electron-hole recombination time
typical of these compounds still represents a fundamental limitation impeding
ultrafast optical modulation. Here we report the first epsilon-near-zero AZO
thin films which simultaneously exhibit ultra-fast carrier dynamics (excitation
and recombination time below 1 ps) and an outstanding reflectance modulation up
to 40% for very low pump fluence levels (< 4 mJ/cm2) at the telecom wavelength
of 1.3 {\mu}m. The unique properties of the demonstrated AZO thin films are the
result of a low temperature fabrication procedure promoting oxygen vacancies
and an ultra-high carrier concentration. As a proof-of-concept, an all-optical
AZO-based plasmonic modulator achieving 3 dB modulation in 7.5 {\mu}m and
operating at THz frequencies is numerically demonstrated. Our results overcome
the traditional "modulation depth vs. speed" trade-off by at least an order of
magnitude, placing AZO among the most promising compounds for
tunable/switchable nanophotonics.Comment: 14 pages, 9 figures, 1 tabl
