Two-dimensional dilute magnetic semiconductors can provide fundamental
insights in the very nature of magnetic orders and their manipulation through
electron and hole doping. Despite the fundamental physics, due to the large
charge density control capability in these materials, they can be extremely
important in spintronics applications such as spin valve and spin-based
transistors. In this article, we studied a two-dimensional dilute magnetic
semiconductors consisting of phosphorene monolayer doped with cobalt atoms in
substitutional and interstitial defects. We show that these defects can be
stabilized and are electrically active. Furthermore, by including holes or
electrons by a potential gate, the exchange interaction and magnetic order can
be engineered, and may even induce a ferromagnetic-to-antiferromagnetic phase
transition in p-doped phosphorene.Comment: 7 pages, 4 colorful figure