This paper presents 2D FDTD modelling and prototype fabrication of a mid-infrared photonic crystal defect laser. The device is fabricated using a two stage Focused Ion Beam process which results in improved hole profiles

Ashley, T

Cryan, MJ

Heard, PJ

Nash, GR

Pugh, JR

Rarity, JG

English

J.R. Pugh

P.J. Heard

G.R. Nash

T. Ashley

J.G. Rarity

M.J. Cryan

Crossref

Design and fabrication of a mid infra-red photonic crystal defect laser in Indium Antimonide

This paper presents 2D FDTD modelling and prototype fabrication of a mid-infrared photonic crystal defect laser. The device is fabricated using a two stage focused ion beam process which results in improved hole profiles

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                          Pugh, J. R., Heard, P. J., Nash, G. R., Ashley, T., Rarity, J. G., & Cryan, M.J. (2008). Design and fabrication of a mid infra-red photonic crystal defectlaser in indium antimonide. 1 - 2.Link to publication record in Explore Bristol ResearchPDF-documentUniversity of Bristol - Explore Bristol ResearchGeneral rightsThis document is made available in accordance with publisher policies. Please cite only the publishedversion using the reference above. Full terms of use are available:http://www.bristol.ac.uk/pure/about/ebr-terms.htmlTake down policyExplore Bristol Research is a digital archive and the intention is that deposited content should not beremoved. However, if you believe that this version of the work breaches copyright law please contactopen-access@bristol.ac.uk and include the following information in your message:• Your contact details• Bibliographic details for the item, including a URL• An outline of the nature of the complaintOn receipt of your message the Open Access Team will immediately investigate your claim, make aninitial judgement of the validity of the claim and, where appropriate, withdraw the item in questionfrom public view.Design and Fabrication of a Mid Infra-Red Photonic Crystal Defect Laser in Indium Antimonide  J.R. Pugh*, P.J. Heardª, G.R. Nash†*, T. Ashley†, J.G. Rarity* and M.J. Cryan* *Centre for Communications Research, Department of Electronic and Electrical Engineering,  University of Bristol, Bristol, BS8 1UB, UK, jon.pugh@bristol.ac.uk ªInterface Analysis Centre, University of Bristol, Bristol, BS8 1UB, UK, †QinetiQ Malvern, WR14 3PS UK  Abstract: This paper presents 2D FDTD modelling and prototype fabrication of a mid-infrared photonic crystal defect laser.  The device is fabricated using a two stage Focused Ion Beam process which results in improved hole profiles. ©2008 Optical Society of America OCIS codes: (140.0140) Lasers and laser optics; (140.3070) Infrared and far-infrared lasers; (140.4780) Optical Resonators 1. Introduction There has been much interest in the design of photonic crystal (PhC) defect lasers in many different wavelength ranges and material systems [1,2] for applications such as single photon sources and sensing [3]. Very little work has been done in mid-infrared range from 3-4µm where a number of important sensing applications are found, and where, as yet, there are no practical room temperature semiconductor laser diodes [4]. PhC defect lasers enable the smallest possible lasing volume to be achieved and the very high Q factors obtainable will produce very low threshold devices which could improve their temperature performance. This paper presents the design and fabrication of a prototype device based on Focused Ion Beam (FIB) etching in the Aluminium-Gallium-Indium Antimonide system, which is a promising candidate for the realization of room temperature lasers emitting in the 3-4µm region. The prototypes are fabricated using conventional ridge laser devices which are post processed using FIB etching, enabling electrical injection to be achieved in the future. There are damage issues associated with FIB processing but annealing and careful choice of FIB etching procedure can minimize these [5,6,7]. 2. Results The 2D Finite Difference Time Domain (FDTD) method has been used to design the initial prototype along with an effective index model to describe the vertical layer structure.  Figure 1 shows a top view of the structure which is an L1 cavity. The cavity is excited by a Gaussian modulated sinewave source from a small dipole placed at the centre of the cavity. The ring down is monitored in time and a FFT of this shows the resonant wavelength of the cavity. This is shown in figure 2 and the Q factor has been calculated to be 665.                 00.10.20.30.40.50.63 3.2 3.4 3.6 3.8 4Wavelength (Microns)Output Power (a.u.)          Fig 1: Top view of PhC defect laser structure in FDTD model                          Fig 2: The resonant response as calculated by FDTD  In order to test a prototype device before E-beam lithography, Focused Ion Beam etching has been used [5,6,7]. This technique allows rapid post-processing of devices and techniques have been developed to overcome damage issues associated with the high energy beams. A two stage process has been developed where by an initial “end-on” etch removes material in the ridge to about 0.5µm above the quantum well layers and leaves a very flat surface for etching the PhC. The device is then rotated through 90 degrees and a vertical etch is used to        a2391_1.pdf   © 2008 OSA / CLEO/QELS 2008       JThA93.pdf   978-1-55752-859-9/08/$25.00 ©2008 IEEEAuthorized licensed use limited to: UNIVERSITY OF BRISTOL. Downloaded on May 24,2010 at 09:58:27 UTC from IEEE Xplore.  Restrictions apply. create the PhC defect structure. This enables holes that have a good overlap with the optical mode to be achieved.                                                                                                              Fig 4: Zoom-in of PhC defect   Fig. 3 shows a FIB image near to the facet of a test laser, grown and fabricated at QinetiQ in Malvern [4]. Here around 4µm of ridge material has been removed with the end-on etch. This is then followed by the PhC defect etch which is shown in detail in figure 4. The excellent hole shape and periodicity can be seen here and it is believed that these holes are approximately 1.5µm deep. 3D modelling in other material systems suggests that this should be sufficient to maintain good Q factor and 3D modelling is now under way for this material system. 4. Conclusions This paper has presented what is believed to be the first example of a PhC defect structure fabricated in the Aluminium-Gallium-Indium Antimonide system. It is hoped to perform both optical and electrical pumping on this structure to assess its performance as a laser. This will be followed by E-beam fabrication using QinetiQ’s in-house facilities.  5. References [1] M Bariz et al, “Design of mid-IR and THz quantum cascade cavities with complete TM photonic bandgap”, Optics Express. 15, 9 May (2007). [2] R Colombelli  et al, “Quantum Cascade Surface-Emitting Photonic Crystal Laser”, Sciencexpress. 30 October (2003). [3] Y.L.D Ho et al, “Three-Dimensional FDTD Simulation of Micro-Pillar Microcavity Geometries Suitable for Efficient Single-Photon Sources”, IEEE Journal of Quantum Electronics. 43, 6 June (2007). [4] Nash et al, “Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs”, App. Phys. Lett. 91, 131118 (2007). [5] M.J.Cryan et al, “Focused Ion Beam-Based Fabrication of Nanostructured Photonic Devices”, IEEE Journal of Selected Topics in Quantum Electronics. 11, 6, Nov/Dec (2005). [6] Y.-L. D. Ho et al, “Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials”, Journal of Vacuum Science B,  July (2007) [7] S. Rubanov et al, “Damage in III-V Compounds during Focused Ion Beam Milling”, Microsc. Microanal. 11, 446-455, May (2005). Fig 3: FIB image showing end-on etch through laser ridge and central PhC defect etch                                                            a2391_1.pdf   © 2008 OSA / CLEO/QELS 2008       JThA93.pdf   Authorized licensed use limited to: UNIVERSITY OF BRISTOL. Downloaded on May 24,2010 at 09:58:27 UTC from IEEE Xplore.  Restrictions apply. 

Design of mid-IR and THz quantum cascade cavities with complete TM photonic bandgap”,

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials”,

Focused Ion Beam-Based Fabrication of Nanostructured Photonic Devices”,

Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on

Quantum Cascade Surface-Emitting Photonic Crystal Laser”,

Three-Dimensional FDTD Simulation of Micro-Pillar Microcavity Geometries Suitable for Efficient Single-Photon Sources”,

Design and fabrication of a mid infra-red photonic crystal defect laser in indium antimonide

This paper presents both 2D and 3D FDTD modelling and prototype fabrication of a mid-infrared photonic crystal defect laser. The device is fabricated using a two stage Focused Ion Beam process which results in improved hole profiles. Optimization of the device will continue to improve the device Q

Pugh, Jon R

Heard, Peter J

Nash, Geoffrey R

Rarity, John

Cryan, Martin J

Design and Fabrication of a Mid Infra-Red Photonic Crystal Defect Laser in Indium Antimonide

This paper presents 2D FDTD modelling and prototype fabrication of a mid-infrared photonic crystal defect laser. The device is fabricated using a two stage focused ion beam process which results in improved hole profilesThis paper presents 2D FDTD modelling and prototype fabrication of a mid-infrared photonic crystal defect laser. The device is fabricated using a two stage focused ion beam process which results in improved hole profile

Design and fabrication of a mid infra-red photonic crystal defect laser in Indium antimonide

Nano design and fabrication of a mid infra-red photonic crystal defect laser in indium antimonide

Design and fabrication of a mid infra-red photonic crystal defect laser in indium antimonide

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