We have achieved a significant experimental Rabi-splitting (3.4 meV) for
confined polaritons in a planar semiconductor λ microcavity for only a
single quantum well (SQW) of GaAs (10 nm) placed at the antinode. The
Rabi-splitting phenomena are discussed in detail based on the semiclassical
theory, where two coupled harmonic oscillators (excitons and photons) are used
to describe the system. In this way, we can obtain the dispersion curve of
polaritons, the minimum value for the cavity reflectance and the oscillator
strength to reach the strong coupling regime. This approach describes an
ensemble of excitons confined in a SQW and includes a dissipation component.
The results present a weak coupling regime, where an enhanced spontaneous
emission takes place, and a strong coupling regime, where Rabi-splitting in the
dispersion curve can be observed. The theoretical results are confronted with
experimental data for the reflectance behavior in resonant and off-resonant
conditions and present a great accuracy. This allows us to determine the
oscillator strength of the confined excitons in the SQW with great precision.Comment: 11 pages, 7 figure
