Geant4 simulations play a crucial role in the analysis and interpretation of
experiments providing low energy precision tests of the Standard Model. This
paper focuses on the accuracy of the description of the electron processes in
the energy range between 100 and 1000 keV. The effect of the different
simulation parameters and multiple scattering models on the backscattering
coefficients is investigated. Simulations of the response of HPGe and
passivated implanted planar Si detectors to \beta{} particles are compared to
experimental results. An overall good agreement is found between Geant4
simulations and experimental data
