High Transition Frequency

Npn Ghz Wideband Transistor

Tamb �c

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DATA SHEET
Product specification September 1995
 DISCRETE SEMICONDUCTORS 
BFG541
NPN 9 GHz wideband transistorSeptember 1995 2  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures 
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial 
transistor, intended for wideband 
applications in the GHz range, such 
as analog and digital cellular 
telephones, cordless telephones 
(CT1, CT2, DECT, etc.), radar 
detectors, satellite TV tuners (SATV), 
MATV/CATV amplifiers and repeater 
amplifiers in fibre-optic systems.
The transistors are mounted in a 
plastic SOT223 envelope.
PINNING
PIN DESCRIPTION
1e m i t t e r
2 base
3e m i t t e r
4 collector
Fig.1  SOT223.
lfpage 4
123
MSB002 - 1 Top viewSeptember 1995 3  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE =0 15 V
IC DC collector current 120 mA
Ptot total power dissipation up to Ts = 140 C; note 1 650 mW
hFE DC current gain IC =4 0  m A ;  V CE =8  V ;   T j =2 5   C6 01 2 0 2 5 0
Cre feedback capacitance IC =0 ;  V CB =8  V ;  f=1  M H z  0.7  pF
fT transition frequency IC =4 0  m A ;  V CE =8  V ;  f=1G H z ;
Tamb = 25 C
 9  GHz
GUM maximum unilateral power gain IC =4 0  m A ;  V CE = 8 V; f = 900 MHz;
Tamb = 25 C
 15  dB
IC =4 0  m A ;  V CE =8  V ;  f=2  G H z ;
Tamb = 25 C
 9  dB
S212 insertion power gain IC =4 0  m A ;  V CE = 8 V; f = 900 MHz;
Tamb = 25 C
13 14  dB
F noise figure s = opt; IC =1 0  m A ;  V CE =8  V ;  
f = 900 MHz; Tamb =2 5   C
 1.3 1.8 dB
PL1 output power at 1 dB gain
compression
IC =4 0  m A ;  V CE =8  V ;  R L =5 0   
f = 900 MHz; Tamb =2 5   C
 21  dBm
ITO third order intercept point IC =4 0  m A ;  V CE =8  V ;  R L =5 0   
f = 900 MHz; Tamb =2 5   C
 34  dBm
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter  20 V
VCES collector-emitter voltage RBE =0  15 V
VEBO emitter-base voltage open collector  2.5 V
IC DC collector current  120 mA
Ptot total power dissipation up to Ts =1 4 0   C; note 1  650 mW
Tstg storage temperature 65 150 C
Tj junction temperature  175 C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point
up to Ts = 140 C; note 1 55 K/WSeptember 1995 4  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
CHARACTERISTICS
Tj =2 5   C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2.  IC =4 0  m A ;  V CE =8  V ;  R L =5 0   ; f = 900 MHz; Tamb =2 5   C;
fp =9 0 0  M H z ;  f q =9 0 2  M H z ;
measured at f(2pq) = 898 MHz and at f(2pq) =9 0 4  M H z .
3. dim = 60 dB (DIN 45004B); IC =4 0  m A ;  V CE =8  V ;  Z L =Z s =7 5   ; Tamb = 25 C;
Vp =V o;V q =V o 6 dB; Vr =V o 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(pqr) = 793.25 MHz
4. IC =4 0  m A ;  V CE =8  V ;  V o = 325 mV; Tamb =2 5   C;
fp =2 5 0  M H z ;  f q =5 6 0  M H z ;
measured at f(pq) =8 1 0  M H z
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE =0 ;  V CB =8  V 50 nA
hFE DC current gain IC =4 0  m A ;  V CE = 8 V 60 120 250
Ce emitter capacitance IC =i c =0 ;  V EB =0 . 5  V ;  f=1  M H z  2  pF
Cc collector capacitance IE =i e =0 ;  V CB =8  V ;  f=1  M H z  1  pF
Cre feedback capacitance IC =0 ;  V CB =8  V ;  f=1  M H z  0.7  pF
fT transition frequency IC =4 0  m A ;  V CE =8  V ;  f=1  G H z ;  
Tamb =2 5   C
 9  GHz
GUM maximum unilateral power gain
(note 1)
IC =4 0  m A ;  V CE = 8 V; f = 900 MHz; 
Tamb =2 5   C
 15  dB
IC =4 0  m A ;  V CE =8  V ;f=2  G H z ;  
Tamb =2 5   C
 9  dB
S212 insertion power gain Ic =4 0  m A ;  V CE = 8 V; f = 900 MHz;
Tamb =2 5   C
13 14  dB
F noise figure s = opt; IC =1 0  m A ;  V CE =8  V ;  
f = 900 MHz; Tamb =2 5   C
 1.3 1.8 dB
s = opt; IC =4 0  m A ;  V CE =8  V ;  
f = 900 MHz; Tamb =2 5   C
 1.9 2.4 dB
s = opt; IC =1 0  m A ;  V CE =8  V ;  
f=2  G H z ;  T amb =2 5   C
 2.1  dB
PL1 output power at 1 dB gain
compression
Ic =4 0  m A ;  V CE =8  V ;  R L =5 0   
f = 900 MHz; Tamb =2 5   C
 21  dBm
ITO third order intercept point note 2  34  dBm
Vo output voltage note 3  500  mV
d2 second order intermodulation
distortion
note 4  50  dB
GUM 10 log 
S21
2
1S 11
2 –  1S 22
2 – 
----------------------------------------------------------  dB. =September 1995 5  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
Fig.2  Power derating curve.
VCE  10 V.
handbook, halfpage
0 50 100 200
1000
800
200
0
600
400
MRA654 - 1
150
Ptot
(mW)
Ts (oC)
Fig.3 DC current gain as a function of collector 
current.
VCE =8  V ;  T j =2 5   C.
handbook, halfpage
MRA655
250
200
hFE
10−2 10−1 11 0
IC (mA)
102
150
100
50
0
Fig.4 Feedback capacitance as a function of 
collector-base voltage.
IC =0 ;  f=1  M H z .
handbook, halfpage
MRA656
1.0
0.8
Cre
(pF)
0481 2
VCB (V)
0.6
0.4
0.2
0
Fig.5 Transition frequency as a function of 
collector current.
f = 1 GHz; Tamb =2 5   C.
handbook, halfpage
MRA657
12
8
fT
(GHz)
10−1 11 0
IC (mA)
VCE = 8 V
4 V
102
4
0September 1995 6  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
In Figs 6 to 9, GUM = maximum power gain; MSG = 
maximum stable gain; Gmax = maximum available gain.
Fig.6  Gain as a function of collector current.
VCE = 8 V; f = 900 MHz.
handbook, halfpage
MRA658
25
20
gain
(dB)
02 0
MSG
40 60
IC (mA)
Gmax
GUM
80
15
10
5
0
Fig.7  Gain as a function of collector current.
VCE =8  V ;  f=2  G H z .
handbook, halfpage
MRA659
25
20
gain
(dB)
0 2 04 06 0
IC (mA)
Gmax
GUM
80
15
10
5
0
Fig.8  Gain as a function of frequency.
IC =1 0  m A ;  V CE =8  V .
handbook, halfpage
MRA660
50
40
gain
(dB)
MSG
Gmax
GUM
30
20
10
0
10
f (MHz)
102 103 104
Fig.9  Gain as a function of frequency.
IC =4 0  m A ;  V CE =8  V .
handbook, halfpage
MRA661
50
40
gain
(dB)
MSG
Gmax
GUM
30
20
10
0
10
f (MHz)
102 103 104September 1995 7  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
Fig.10 Intermodulation distortion as a function of 
collector current.
handbook, halfpage
10 60
–20
–70
–60
MEA977
–50
–40
–30
20 30 40 50
I     (mA) C
dim
(dB)
Fig.11 Second order intermodulation distortion as 
a function of collector current.
handbook, halfpage
10 60
–20
–70
–60
MEA976
–50
–40
–30
20 30 40 50
I     (mA) C
d2
(dB)
Fig.12 Minimum noise figure and associated 
available gain as functions of collector 
current.
VCE =8  V .
handbook, halfpage
MRA666
5
4
Fmin
(dB)
11 0
2000 MHz 2000 MHz
1000 MHz
f = 900 MHz
1000 MHz
900 MHz
500 MHz
100
IC (mA)
3
2
1
0
20
15
Gass
(dB)
Gass
Fmin
10
5
0
−5
Fig.13 Minimum noise figure and associated 
available gain as functions of frequency.
VCE =8  V .
handbook, halfpage
MRA667
5
4
Fmin
(dB)
102 103 104
40 mA
40 mA
10 mA
IC =10 mA
f (MHz)
3
2
1
0
20
15
Gass
(dB)
Gass
Fmin
10
5
0
−5September 1995 8  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
handbook, full pagewidth
MRA668
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
G = 13 dB
G = 14 dB
G = 15 dB
Gmax = 15.3 dB
F = 1.5 dB
Fmin =
1.3 dB
F = 2 dB
F = 3 dB
ΓOPT
ΓMS
Fig.14  Noise circle figure.
IC =1 0  m A ;  V CE =8  V ;
Zo = 50 ; f = 900 MHz.
handbook, full pagewidth
MRA669
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
G = 6 dB
G = 7 dB
G = 8 dB
Gmax = 8.5 dB
F = 2.5 dB
Fmin = 2.1 dB
F = 3 dB
F = 4 dB
ΓOPT
ΓMS
Fig.15  Noise circle figure.
IC =1 0  m A ;  V CE =8  V ;
Zo = 50 ; f = 2 GHz.September 1995 9  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
handbook, full pagewidth
MRA662
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5
3 GHz
40 MHz
1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
Fig.16  Common emitter input reflection coefficient (S11).
IC =4 0  m A ;  V CE =8  V .
Zo = 50 .
Fig.17  Common emitter forward transmission coefficient (S21).
IC =4 0  m A ;  V CE =8  V .
handbook, full pagewidth
MRA663
50 40
40 MHz
3 GHz
30 20 10
180°
−135°
−90°
−45°
0°
45° 135°
90°September 1995 10  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
handbook, full pagewidth
MRA664
0.5 0.4 0.3
3 GHz
40 MHz 0.2 0.1
180°
−135°
−90°
−45°
0°
45°
90°
135°
Fig.18  Common emitter reverse transmission coefficient (S12).
IC =4 0  m A ;  V CE =8  V .
handbook, full pagewidth
MRA665
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5
3 GHz
40 MHz
1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
Fig.19  Common emitter output reflection coefficient (S22).
IC =4 0  m A ;  V CE =8  V .
Zo = 50 .September 1995 11  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
PACKAGE OUTLINE
UNIT A1 bp cDE e1 HE Lp Qy w v
 REFERENCES OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
 IEC  JEDEC  JEITA
mm 0.10
0.01
1.8
1.5
0.80
0.60
b1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6 7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.1 0.2
DIMENSIONS (mm are the original dimensions)
 SOT223 SC-73 04-11-10
06-03-16
w M bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
v M A
A B
B
c
y
0 2 4 mm
scale
A
X
13 2
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223September 1995 12  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published 
and may differ in case of multiple devices. The latest product status information is available on the Internet at 
URL http://www.nxp.com. 
DOCUMENT
STATUS(1)
PRODUCT 
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product 
development. 
Preliminary data sheet Qualification This document contains data from the preliminary specification. 
Product data sheet Production This document contains the product specification. 
DEFINITIONS
Product specification  The information and data 
provided in a Product data sheet shall define the 
specification of the product as agreed between NXP 
Semiconductors and its customer, unless NXP 
Semiconductors and customer have explicitly agreed 
otherwise in writing. In no event however, shall an 
agreement be valid in which the NXP Semiconductors 
product is deemed to offer functions and qualities beyond 
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability  Information in this 
document is believed to be accurate and reliable. 
However, NXP Semiconductors does not give any 
representations or warranties, expressed or implied, as to 
the accuracy or completeness of such information and 
shall have no liability for the consequences of use of such 
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Notwithstanding any damages that customer might incur 
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aggregate and cumulative liability towards customer for 
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reserves the right to make changes to information 
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specifications and product descriptions, at any time and 
without notice. This document supersedes and replaces all 
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not designed, authorized or warranted to be suitable for 
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of an NXP Semiconductors product can reasonably be 
expected to result in personal injury, death or severe 
property or environmental damage. NXP Semiconductors 
accepts no liability for inclusion and/or use of NXP 
Semiconductors products in such equipment or 
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Applications  Applications that are described herein for 
any of these products are for illustrative purposes only. 
NXP Semiconductors makes no representation or 
warranty that such applications will be suitable for the 
specified use without further testing or modification. 
Customers are responsible for the design and operation of 
their applications and products using NXP 
Semiconductors products, and NXP Semiconductors 
accepts no liability for any assistance with applications or 
customer product design. It is customer’s sole 
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customer’s applications and products planned, as well as 
for the planned application and use of customer’s third 
party customer(s). Customers should provide appropriate 
design and operating safeguards to minimize the risks 
associated with their applications and products. September 1995 13  
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
NXP Semiconductors does not accept any liability related 
to any default, damage, costs or problem which is based 
on any weakness or default in the customer’s applications 
or products, or the application or use by customer’s third 
party customer(s). Customer is responsible for doing all 
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customer(s). NXP does not accept any liability in this 
respect.
Limiting values  Stress above one or more limiting 
values (as defined in the Absolute Maximum Ratings 
System of IEC 60134) will cause permanent damage to 
the device. Limiting values are stress ratings only and 
(proper) operation of the device at these or any other 
conditions above those given in the Recommended 
operating conditions section (if present) or the 
Characteristics sections of this document is not warranted. 
Constant or repeated exposure to limiting values will 
permanently and irreversibly affect the quality and 
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Semiconductors products are sold subject to the general 
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Printed in The Netherlands R77/03/pp14 Date of release: September 1995

NPN 9 GHz wideband transistor

http://www.nxp.com/documents/data_sheet/BFG541_CNV.pdf

NPN 9 GHz wideband transistor

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