http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-72077 Development of SiC-FET methanol sensor

Abstract

A silicon carbide based field effect transistor (SiC-FET) structure was used for methanol sensing. Due to the chemical stability and wide band gap of SiC, these sensors are suitable for applications over a wide temperature range. Two different catalytic metals, Pt and Ir, were tested as gate contacts for detection of methanol. The sensing properties of both Ir gate and Pt gate SiC-FET sensors were investigated in the concentration range 0.3 – 5 % of methanol in air and in the temperature range 150–350ºC. It was observed that compared to the Ir gate sensor, the Pt gate sensor showed higher sensitivity, faster response and recovery to methanol vapour at comparatively lower temperature, with an optimum around 200ºC. Quantum-chemical calculations were used to investigate the MeOH adsorption and to rationalize the observed non-Langmuir behavior of the response functions. The methanol sensing mechanism of the SiC-FET is discussed