Wafer-level characterization of industrial grade Si-based qubit devices.

Abstract

International audienceEfforts in improving the quality and number of solid-state spin qubits within a single device are currently hindered by the lack of large-scale characterization tools. Here, we present a characterization methodology for bi-linear quantum-dot array structures using transistor-like metrics measured at both 300K and 1K, at the wafer-level. The quantum-dot measurements at 1K are crucial to obtain specific information about the spin-qubit confinement and provide meaningful feedbacks to the process integration. With this large-scale characterization, we study the correlations between (i) 300K and 1K transistor-like metrics, and (ii) 1K transistor-like and quantum-dot properties. We discuss the correlations and how they can speed up the characterization at the wafer scale