Noise Investigations On MESFETs Transplanted By Epitaxial Lift Off

Abstract

In this paper we present the results of RF and noise measurements on MESFETs transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. [1,2]. Gate leakage current as well as noise and RF characteristics of MESFETs and GaAs circuits are compared before and after ELO. 1. Introduction ELO is a technology which allows the monolithic integration of incompatible materials such as GaAs and InP. The goal of our project is to build optical access nodes for high speed computer networks. As a first step the RF and noise performance of the transplanted MESFETs needed to be investigated. 2. Process Description GaAs MESFETs were fabricated using the slightly modified D07A foundry process offered by Philips Microwave Limeil, France. In order to make ELO possible a 50 nm thick AlAs layer was grown prior to the device layer growth. A 300 m thick wax layer was de..