A scalable macromodel for substrate noise coupling in lightly doped substrates with and without a buried layer has been developed. This model is based on Z-parameters and is scalable with contact size and separation. This model requires process dependent parameters that can be extracted easily from a small number of device simulations or measurements. Once these parameters are known, the model can be used for any spacing between the injecting and sensing contacts and for different contact geometries. The model is validated with measurements for a lightly doped substrate with a buried layer and predicts the substrate resistance values to within 12%. The substrate resistances obtained using the model are also in close agreement with the three-dimensional simulations for a lightly doped substrate
